Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4822 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4822 is Pb-free (meets ROHS & Sony 259 specifications). AO4822L is a Green Product order

文件：110.87 Kbytes 页数：4 Pages

AOSMD

万国半导体

丝印：4822；Package：SOP-8；Dual N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 8A (VGS = 10V) ● RDS(ON)

文件：2.57955 Mbytes 页数：5 Pages

KEXIN

科信电子

Dual N-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET®Power MOSFET • 100 Rg Tested • 100 UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Notebook System Power • Low Current DC/DC

文件：1.04825 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

丝印：4822；Package：SOP-8；Dual N-Channel Enhancement Mode Power MOSFET

GENERAL FEATURES RDS(ON) ≤35 m@VGS=10V RDS(ON) ≤45 m2@VGS=4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability

文件：3.36305 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

30V Dual N-channel MOSFET

文件：304.99 Kbytes 页数：6 Pages

AOSMD

万国半导体

场效应管

HXY MOSFET

华轩阳电子

Dual N-Channel MOSFET

XW

芯微半导体

Dual N-Channel Enhancement Mode Power MOSFET

Techpublic

台舟电子

Dual N-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested • 100 UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Notebook System Power • Low Current DC/DC

文件：1.04822 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

丝印：4822A；Package：SOP-8；Dual N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 8A (VGS = 10V) ● RDS(ON)

文件：2.3476 Mbytes 页数：5 Pages

KEXIN

科信电子