丝印：4407；Package：SO-8；P-Channel Enhancement Mode Field Effect Transistor

General Description The AO4407 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4407 is Pb-free (meets ROHS & Sony 259 specifications)

文件：168.67 Kbytes 页数：4 Pages

AOSMD

万国半导体

P-Channel MOSFET

■ Features ● VDS (V) =-30V ● ID =-12 A (VGS =-20V) ● RDS(ON)

文件：2.34719 Mbytes 页数：4 Pages

KEXIN

科信电子

P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • 100 Rg Tested • 100 UIS Tested APPLICATIONS • Load Switches - Notebook PCs - Desktop PCs

文件：996.51 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

P-Channel MOSFET uses advanced trench technology

Description： This P-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=-30V,ID=-15A,RDS(ON)

文件：1.49514 Mbytes 页数：7 Pages

DOINGTER

杜因特

丝印：4407A；Package：SOP-8；P-Channel Enhancement Mode Power MOSFET

GENERAL FEATURES Vos = -30V ID=-60 A RDS(ON)

文件：3.50124 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

P-Channel MOSFET

Features VDS (V) =-30V ID =-12 A (VGS =-20V) RDS(ON)

文件：2.81335 Mbytes 页数：5 Pages

EVVOSEMI

翊欧

丝印：4407；Package：SO-8；30V P-Channel MOSFET

文件：537.42 Kbytes 页数：5 Pages

AOSMD

万国半导体

丝印：AO4407；Package：SOP-8；P-Channel MOSFET

General Description • Latest Advanced Trench Technology • Low RDS(ON) • High Current Capability • RoHS and Halogen-Free Compliant

文件：518.47 Kbytes 页数：7 Pages

EVVOSEMI

翊欧

丝印：AO4407；Package：SOP-8；P-Channel MOSFET

General Description • Latest Advanced Trench Technology • Low RDS(ON) • High Current Capability • RoHS and Halogen-Free Compliant Product Summary VDS -30V ID (at VGS=-10V) -14A RDS(ON) (at VGS=-10V)

文件：790.77 Kbytes 页数：7 Pages

UMW

友台半导体

场效应管

HXY MOSFET

华轩阳电子