AP3407

HIGHEFFICIENCYSYNCHRONOUSDC-DCBUCKCONVERTER

AP3407,A

1.2A,1.4MHzHighEfficiencySynchronousDC-DCBuckConverter

BC3407

Plastic-EncapsulateMOSFETS

GeneralDescription TheBC3407usesadvancedtrenchtechnologytoprovideexcellent RDS(on)withlowgatecharge.Thisdeviceissuitableforuseasaload switchorinPWMapplications.

BC3407-CAR

Plastic-EncapsulateMOSFETS

GeneralDescription -CARforautomotiveandotherapplicationsrequiringuniquesiteand AEC-Q101qualifiedandPPAPcapable. TheBC3407usesadvancedtrenchtechnologytoprovideexcellentRDS(on)withlowgatecharge. ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.

BCL3407DW

Plastic-EncapsulateMOSFETS

GeneralDescription TheBCL3407DWusesadvancedtrenchtechnologytoprovideexcellentRDS(on)withlowgatecharge. ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.

BLM3407

P-ChannelEnhancementModePowerMOSFET

BM3407

P-Channel30V(D-S)4AP-MOSFET

CEM3407L

DualP-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-30V,-5.1A,RDS(ON)=48mΩ@VGS=-10V. RDS(ON)=65mΩ@VGS=-4.5V. RDS(ON)=115mΩ@VGS=-2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired.

CEM3407L

DualP-ChannelEnhancementModeFieldEffectTransistor

FEATURES -30V,-5.1A,RDS(ON)=48mW@VGS=-10V. RDS(ON)=65mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Leadfreeproductisacquired. RDS(ON)=115mW@VGS=-2.5V.

CJ3407

P-ChannelEnhancementModeFieldEffectTransistor