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AP3407

HIGHEFFICIENCYSYNCHRONOUSDC-DCBUCKCONVERTER

DIODESDiodes Incorporated

美台半导体

AP3407,A

1.2A,1.4MHzHighEfficiencySynchronousDC-DCBuckConverter

BCDSEMIBCD Semiconductor Manufacturing Limited

新进半导体上海新进半导体制造有限公司

BC3407

Plastic-EncapsulateMOSFETS

GeneralDescription TheBC3407usesadvancedtrenchtechnologytoprovideexcellent RDS(on)withlowgatecharge.Thisdeviceissuitableforuseasaload switchorinPWMapplications.

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣电子唯圣电子有限公司

BC3407-CAR

Plastic-EncapsulateMOSFETS

GeneralDescription -CARforautomotiveandotherapplicationsrequiringuniquesiteand AEC-Q101qualifiedandPPAPcapable. TheBC3407usesadvancedtrenchtechnologytoprovideexcellentRDS(on)withlowgatecharge. ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣电子唯圣电子有限公司

BCL3407DW

Plastic-EncapsulateMOSFETS

GeneralDescription TheBCL3407DWusesadvancedtrenchtechnologytoprovideexcellentRDS(on)withlowgatecharge. ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣电子唯圣电子有限公司

BLM3407

P-ChannelEnhancementModePowerMOSFET

BellingSHANGHAI BELLING CO., LTD.

上海贝岭上海贝岭股份有限公司

BM3407

P-Channel30V(D-S)4AP-MOSFET

booklyBookly Micro electronic

百力微电子上海百力微电子股份有限公司

CEM3407L

DualP-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-30V,-5.1A,RDS(ON)=48mΩ@VGS=-10V. RDS(ON)=65mΩ@VGS=-4.5V. RDS(ON)=115mΩ@VGS=-2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CEM3407L

DualP-ChannelEnhancementModeFieldEffectTransistor

FEATURES -30V,-5.1A,RDS(ON)=48mW@VGS=-10V. RDS(ON)=65mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Leadfreeproductisacquired. RDS(ON)=115mW@VGS=-2.5V.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CJ3407

P-ChannelEnhancementModeFieldEffectTransistor

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

长电科技江苏长电科技股份有限公司

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