丝印：A2CV；Package：SOT-23；N-Channel MOSFET

FEATURES Lead free product is acquired Surface mount package

文件：1.10709 Mbytes 页数：5 Pages

UMW

友台半导体

丝印：A29T；Package：SOT23；N-Channel Enhancement Mode MOSFET

Features Vbs = 30V,Ip = 3A Rosion)

文件：2.30598 Mbytes 页数：6 Pages

TECHPUBLIC

台舟电子

N-Channel Enhancement Mode MOSFET

Techpublic

台舟电子

N-Channel MOSFET

Features ● VDS (V) = 30V ● ID = 4 A ● RDS(ON) 55m (VGS = 10V) ● RDS(ON) 70m (VGS = 4.5V) ● RDS(ON) 110m (VGS = 2.5V) ● Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish

文件：1.15863 Mbytes 页数：4 Pages

KEXIN

科信电子

N-Channel Enhancement Mode Field Effect Transistor

文件：111.94 Kbytes 页数：4 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

N-Channel Enhancement Mode Field Effect Transistor

General Description The AON3402 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load swi

文件：1.08294 Mbytes 页数：4 Pages

AOSMD

万国半导体