ANUJ6426

包装：盒 类别：工业自动化与控制 专用 描述：6MM LENS FOR POWER HEAD

ANUJ6426SV

包装：盒 类别：工业自动化与控制 专用 描述：STD. LENS 6 DIA. 90

AON6426

DFN5X6PACKAGEMARKINGDESCRIPTION

AON6426L

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAON6426LcombinesadvancedtrenchMOSFETtechnologywithalowresistancepackagetoprovideextremelylowRDS(ON).Thisdeviceisidealforloadswitchandbatteryprotectionapplications. -RoHSCompliant -HalogenFree Features VDS(V)=30V ID=24A(VGS=

AON6426L

DFN5X6PACKAGEMARKINGDESCRIPTION

CEA6426

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,4.6A,RDS(ON)=90mW@VGS=10V. RDS(ON)=110mW@VGS=4.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-89package. Leadfreeproductisacquired.

CEA6426

N-Channel0-V(D-S)MOSFET

FEATURES •Halogen-free •TrenchFET®PowerMOSFET APPLICATIONS •LoadSwitchesforPortableDevices

CEA6426

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,3A,RDS(ON)=90mΩ@VGS=10V. RDS(ON)=110mΩ@VGS=4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-89package.

CEB6426

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,17A,RDS(ON)=66mΩ@VGS=10V. RDS(ON)=85mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CED6426

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,16A,RDS(ON)=66mΩ@VGS=10V. RDS(ON)=85mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.