P-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION The AM4435 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. The AM4435 is available in SOP8 Package FEATURES  VDS = -30V,ID = -9.1A RDS(ON)

文件：664.74 Kbytes 页数：9 Pages

AITSEMI

创瑞科技

-30V P-CHANNEL ENHANCEMENT MODE

DESCRIPTION FEATURES The AM4435 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density. Advanced trench technology to provide excellent RDS(ON). These devices are particularly suited for low voltage application such as cellular phone and no

文件：331.5 Kbytes 页数：8 Pages

AITSEMI

创瑞科技

P-Channel 30-V (D-S) MOSFET

文件：1.00264 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

-30V P-CHANNEL ENHANCEMENT MODE

DESCRIPTION FEATURES The AM4435 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density. Advanced trench technology to provide excellent RDS(ON). These devices are particularly suited for low voltage application such as cellular phone and no

文件：331.5 Kbytes 页数：8 Pages

AITSEMI

创瑞科技

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION The AM4435 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. The AM4435 is available in SOP8 Package FEATURES  VDS = -30V,ID = -9.1A RDS(ON)

文件：664.74 Kbytes 页数：9 Pages

AITSEMI

创瑞科技

P-Channel 30-V (D-S) MOSFET

文件：1.00264 Mbytes 页数：9 Pages

VBSEMI

微碧半导体