AM4401P

P-Channel 150-V (D-S) MOSFET

AO4401

P-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAO4401usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas2.5V.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. Features VDS(V)=-30V ID=-6.1A RDS(ON)

AO4401

P-Channel30-V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •ComplianttoRoHSDirective2002/95/EC

AO4401

P-channelEnhancementModePowerMOSFET

Features VDS=-30V,ID=-5.1A RDS(ON)

AV4401

TO-92Plastic-EncapsulateTransistors

B4401

UniversalProgrammers

CET4401B

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-40V,-4.9A,RDS(ON)=57mΩ@VGS=-10V. RDS(ON)=85mΩ@VGS=-4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-223package.

CHT4401PT

NPNSwitchingTransistor

VOLTAGE40VoltsCURRENT0.6Ampere FEATURE *Smallflatpackage.(SOT-23) *Lowcurrent(Max.=600mA). *Suitableforhighpackingdensity. *Lowvoltage(Max.=40V). *Highsaturationcurrentcapability. *Voltagecontrolledsmallsignalswitch. APPLICATION *Telephonyandproferssiona

CHT4401SPT

NPNSwitchingTransistor

VOLTAGE40VoltsCURRENT0.6Ampere FEATURE *Smallsurfacemountingtype.(SC-88/SOT-363) *Lowcurrent(Max.=600mA). *Suitableforhighpackingdensity. *Lowvoltage(Max.=40V). *Highsaturationcurrentcapability. *Voltagecontrolledsmallsignalswitch. APPLICATION *Telephonyan

CHT4401TPT

NPNSwitchingTransistor

VOLTAGE40VoltsCURRENT0.6Ampere FEATURE *Smallsurfacemountingtype.(SC-75/SOT-416) *Lowcurrent(Max.=600mA). *Suitableforhighpackingdensity. *Lowvoltage(Max.=40V). *Highsaturationcurrentcapability. *Voltagecontrolledsmallsignalswitch. APPLICATION *Telephonyan