AM3419

P-CHANNEL ENHANCEMENT MODE MOSFET

FEATURES -20V/-3.5A, RDS(ON)=73mΩ(max.)@VGS=-4.5V RDS(ON)=110mΩ(max.)@VGS=-2.5V RDS(ON)=193mΩ(max.)@VGS=-1.8V ReliableandRugged AvailableinSOT-23Package APPLICATION PowerManagementinNotebookComputer, PortableEquipmentandBatteryPowered Systems.

AM3419E3R

P-CHANNEL ENHANCEMENT MODE MOSFET

FEATURES -20V/-3.5A, RDS(ON)=73mΩ(max.)@VGS=-4.5V RDS(ON)=110mΩ(max.)@VGS=-2.5V RDS(ON)=193mΩ(max.)@VGS=-1.8V ReliableandRugged AvailableinSOT-23Package APPLICATION PowerManagementinNotebookComputer, PortableEquipmentandBatteryPowered Systems.

AM3419E3VR

P-CHANNEL ENHANCEMENT MODE MOSFET

FEATURES -20V/-3.5A, RDS(ON)=73mΩ(max.)@VGS=-4.5V RDS(ON)=110mΩ(max.)@VGS=-2.5V RDS(ON)=193mΩ(max.)@VGS=-1.8V ReliableandRugged AvailableinSOT-23Package APPLICATION PowerManagementinNotebookComputer, PortableEquipmentandBatteryPowered Systems.

AO3419

P-ChannelEnhancementModeFieldEffectTransistor

[Alpha&OmegaSemiconductor,Ltd.] GeneralDescription TheAO3419usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas2.5V.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.ItisESDprotected.AO34

AO3419

P-ChannelEnhancementMOSFET

Features ●VDS(V)=-20V ●ID=-3.5A ●RDS(ON)

AO3419

20VP-ChannelMOSFET

GeneralDescription TheAO3419usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas2.5V.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.ItisESDprotected.AO3419L(GreenProduct)isofferedinalea

AO3419

P-Channel20-V(D-S)MOSFET

AO3419-HF

P-ChannelMOSFET

AO3419L

P-ChannelEnhancementModeFieldEffectTransistor

[Alpha&OmegaSemiconductor,Ltd.] GeneralDescription TheAO3419usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas2.5V.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.ItisESDprotected.AO34

AON3419

PlasticEncapsulatedDevice