MOSFET N-CHANNEL ENHANCEMENT MODE

DESCRIPTION The AM3412 is available in SOT-23S Package Type FEATURES  50V/0.1A, RDS(ON)=3.5Ω(MAX) @VGS=5V ID = 0.1A RDS(ON) = 10Ω(MAX) @VGS= 2.75V. ID = 0.1A  Super High dense cell design for extremely low RDS(ON).  Reliable and Rugged.  Low Threshold Voltage (0.5V- 1.5V) Make it Ide

文件：431.95 Kbytes 页数：7 Pages

AITSEMI

创瑞科技

SOT-23/SOT-23S 晶體管

AiT-Semi

创瑞科技

MOSFET N-CHANNEL ENHANCEMENT MODE

DESCRIPTION The AM3412 is available in SOT-23S Package Type FEATURES  50V/0.1A, RDS(ON)=3.5Ω(MAX) @VGS=5V ID = 0.1A RDS(ON) = 10Ω(MAX) @VGS= 2.75V. ID = 0.1A  Super High dense cell design for extremely low RDS(ON).  Reliable and Rugged.  Low Threshold Voltage (0.5V- 1.5V) Make it Ide

文件：431.95 Kbytes 页数：7 Pages

AITSEMI

创瑞科技

MOSFET N-CHANNEL ENHANCEMENT MODE

DESCRIPTION The AM3412 is available in SOT-23S Package Type FEATURES  50V/0.1A, RDS(ON)=3.5Ω(MAX) @VGS=5V ID = 0.1A RDS(ON) = 10Ω(MAX) @VGS= 2.75V. ID = 0.1A  Super High dense cell design for extremely low RDS(ON).  Reliable and Rugged.  Low Threshold Voltage (0.5V- 1.5V) Make it Ide

文件：431.95 Kbytes 页数：7 Pages

AITSEMI

创瑞科技

N-Channel 30-V (D-S) MOSFET

文件：376.06 Kbytes 页数：5 Pages

AnalogPower

MOSFET

AnalogPower

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