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AS29F040-90LI

5V512Kx8CMOSFLASHEEPROM

Functionaldescription TheAS29F040isa4-megabit,5-volt-onlyFlashmemorydeviceorganizedas512Kbytesof8bitseach.Forflexibleeraseanprogramcapability,the4megabitsofdataisdividedintoeight64K-bytesectors.The×8dataappearsonDQ0–DQ7.TheAS29F040isofferedinJEDECsta

ALSC

Alliance Semiconductor Corporation

AS29F040-90TC

5V512Kx8CMOSFLASHEEPROM

Functionaldescription TheAS29F040isa4-megabit,5-volt-onlyFlashmemorydeviceorganizedas512Kbytesof8bitseach.Forflexibleeraseanprogramcapability,the4megabitsofdataisdividedintoeight64K-bytesectors.The×8dataappearsonDQ0–DQ7.TheAS29F040isofferedinJEDECsta

ALSC

Alliance Semiconductor Corporation

AS29F040-90TI

5V512Kx8CMOSFLASHEEPROM

Functionaldescription TheAS29F040isa4-megabit,5-volt-onlyFlashmemorydeviceorganizedas512Kbytesof8bitseach.Forflexibleeraseanprogramcapability,the4megabitsofdataisdividedintoeight64K-bytesectors.The×8dataappearsonDQ0–DQ7.TheAS29F040isofferedinJEDECsta

ALSC

Alliance Semiconductor Corporation

EN29F040-90J

4Megabit(512Kx8-bit)FlashMemory

[EON] GENERALDESCRIPTION TheEN29F040isa4-Megabit,electricallyerasable,read/writenon-volatileflashmemory.Organizedinto512Kwordswith8bitsperword,the4Mofmemoryisarrangedineightuniformsectorsof64Kbyteseach.Anybytecanbeprogrammedtypicallyin10µs.TheEN29F040

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EN29F040-90JI

4Megabit(512Kx8-bit)FlashMemory

[EON] GENERALDESCRIPTION TheEN29F040isa4-Megabit,electricallyerasable,read/writenon-volatileflashmemory.Organizedinto512Kwordswith8bitsperword,the4Mofmemoryisarrangedineightuniformsectorsof64Kbyteseach.Anybytecanbeprogrammedtypicallyin10µs.TheEN29F040

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EN29F040-90P

4Megabit(512Kx8-bit)FlashMemory

[EON] GENERALDESCRIPTION TheEN29F040isa4-Megabit,electricallyerasable,read/writenon-volatileflashmemory.Organizedinto512Kwordswith8bitsperword,the4Mofmemoryisarrangedineightuniformsectorsof64Kbyteseach.Anybytecanbeprogrammedtypicallyin10µs.TheEN29F040

ETCList of Unclassifed Manufacturers

未分类制造商

EN29F040-90PI

4Megabit(512Kx8-bit)FlashMemory

[EON] GENERALDESCRIPTION TheEN29F040isa4-Megabit,electricallyerasable,read/writenon-volatileflashmemory.Organizedinto512Kwordswith8bitsperword,the4Mofmemoryisarrangedineightuniformsectorsof64Kbyteseach.Anybytecanbeprogrammedtypicallyin10µs.TheEN29F040

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未分类制造商

EN29F040-90T

4Megabit(512Kx8-bit)FlashMemory

[EON] GENERALDESCRIPTION TheEN29F040isa4-Megabit,electricallyerasable,read/writenon-volatileflashmemory.Organizedinto512Kwordswith8bitsperword,the4Mofmemoryisarrangedineightuniformsectorsof64Kbyteseach.Anybytecanbeprogrammedtypicallyin10µs.TheEN29F040

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未分类制造商

EN29F040-90TI

4Megabit(512Kx8-bit)FlashMemory

[EON] GENERALDESCRIPTION TheEN29F040isa4-Megabit,electricallyerasable,read/writenon-volatileflashmemory.Organizedinto512Kwordswith8bitsperword,the4Mofmemoryisarrangedineightuniformsectorsof64Kbyteseach.Anybytecanbeprogrammedtypicallyin10µs.TheEN29F040

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未分类制造商

供应商型号品牌批号封装库存备注价格
AMD
23+
原厂原包
19960
只做进口原装 终端工厂免费送样
询价
AMD
05+
TSOP
1000
自己公司全新库存绝对有货
询价
AMD
24+
PLCC
1000
询价
AMD
24+
PLCC
3500
原装现货,可开13%税票
询价
AMD
22+
PLCC
8200
原装现货库存.价格优势!!
询价
AMD
2023+
PLCC
50000
原装现货
询价
AMD
23+
TSOP32
8000
只做原装现货
询价
AMD
23+
TSOP32
7000
询价
AMD
23+
TSOP32
3000
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
询价
AMD
23+
TSOP
5000
专注配单,只做原装进口现货
询价
更多AM29F040-90EIB供应商 更新时间2025-7-20 8:01:00