丝印：A12M1T040；Package：PG-TO247-4-STD-NT6.7；CoolSiC™ 1200 V SiC Trench MOSFET

Features • VDSS = 1200 V at Tvj = -55...175°C • IDDC = 55 A at TC = 25°C • RDS(on) = 40 mΩ at VGS = 20 V, Tvj = 25°C • New performance-optimized chip technology (Gen1p) with improved RDSon* A FOM • Increased recommended turn-on voltage (VGS(on) = 20 V) for lower RDS(on) • Best in class switc

文件：1.8026 Mbytes 页数：15 Pages

Infineon

英飞凌

汽车级 1200V 碳化硅 (SiC) 沟槽功率 MOSFET，采用 TO247-4L（细引线），40mΩ

With Infineon’s performance optimized chip technology (Gen1p), the SiC Mosfet features best-in-class switching performance, robustness against parasitic turn-ons, as well as improved RDSon and Rth(j-c). High power density, superior efficiency, bi-directional charging capabilities and significant red • Very low switching losses\n• Increased turn-on voltage VGS(on)= 20 V\n• Best in class switching energy\n• Lowest device capacitances\n• low Crss/Ciss ratio and high VGS(th) to avoid parasitic turn-on\n• Reduced total gate charge QGtot for lower driving power and losses\n• .XT die attach technology;

Infineon

英飞凌

CoolSiC™ 1200 V SiC Trench MOSFET

Features • VDSS = 1200 V at Tvj = -55...175°C • IDDC = 55 A at TC = 25°C • RDS(on) = 40 mΩ at VGS = 20 V, Tvj = 25°C • New performance-optimized chip technology (Gen1p) with improved RDSon* A FOM • Increased recommended turn-on voltage (VGS(on) = 20 V) for lower RDS(on) • Best in class switc

文件：1.83406 Mbytes 页数：15 Pages

Infineon

英飞凌

CoolSiC??1200 V SiC Trench MOSFET : silicon carbide MOSFET

Features • VDSS = 1200 V at Tvj = 25°C • IDCC = 55 A at Tvj = 25°C • RDS(on) = 39 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Short circuit withstand time 3 µs • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against parasitic turn on, 0 V turn-off gate voltage ca

文件：1.38658 Mbytes 页数：17 Pages

Infineon

英飞凌

CoolSiC??1200 V SiC Trench MOSFET : Silicon Carbide MOSFET with .XT interconnection technology

Features • VDSS = 1200 V at Tvj = 25°C • IDCC = 55 A at Tvj = 25°C • RDS(on) = 39 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Short circuit withstand time 3 μs • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against parasitic turn on, 0 V turn-off gate voltage ca

文件：1.34991 Mbytes 页数：17 Pages

Infineon

英飞凌