SILICON HYPERABRUPT TUNING VARACTOR

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NPN Epitaxial Planar Silicon Transistor Features • VCEO=200V, IC=0.7A • Low collector-to-emitter saturation voltage VCE(sat)=0.125V(typ.)@IC=0.35A • High-speed switching tf=70ns(typ.)@IC=0.3A • The plastic-covered heat sink eliminates the need for an insulator when mounting the AML2002

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SANYO

三洋

Bipolar Transistor 200V, 0.7A, Low VCE(sat), NPN Single TO-126ML

Bipolar Transistor 200V, 0.7A, Low VCE(sat), NPN Single TO-126ML Features • VCEO=200V, IC=0.7A • Low collector-to-emitter saturation voltage VCE(sat)=0.125V(typ.)@IC=0.35A • High-speed switching tf=70ns(typ.)@IC=0.3A • The plastic-covered heat sink eliminates the need for an insulator when m

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ONSEMI

安森美半导体

Using the Demoboard for the TD350 Advanced IGBT Driver

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STMICROELECTRONICS

意法半导体