Dual N-Channel 60 V (D-S) 175 째C MOSFET

文件：1.08434 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

Dual N-Channel 60 V (D-S) 175 째C MOSFET

文件：1.08431 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

Trench Power MOSFET

Alfa-MOS

闸能

Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode

General Description The AO4906 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A Schottky diode is co-packaged in parallel with the synchronous

文件：123.88 Kbytes 页数：5 Pages

AOSMD

万国半导体

Dual N-Channel MOSFET

■ Features N-Channel 1 ● VDS (V) = 30V ● ID = 8.5 A (VGS = 10V) ● RDS(ON)

文件：1.78577 Mbytes 页数：5 Pages

KEXIN

科信电子

Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode

General Description The AO4906 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A Schottky diode is co-packaged in parallel with the synchronous

文件：123.88 Kbytes 页数：5 Pages

AOSMD

万国半导体