SOP8 N 20V 11MR

文件：1.454948 Mbytes 页数：5 Pages

Bychip

百域芯

PDF上传者：深圳市凯睿晟科技有限公司

N-Channel 20V (D-S) MOSFET

文件：1.00664 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

Trench Power MOSFET

Alfa-MOS

闸能

N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4412 uses advanced trench technology to provide excellent RDS(ON) and ultra low gate charge for use has a fast high side switch. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance.Standard product

文件：143.13 Kbytes 页数：4 Pages

AOSMD

万国半导体

N-Channel 20V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFET • Optimized for High-Side Synchronous Rectifier Operation • 100 Rg Tested • 100 UIS Tested APPLICATIONS • Notebook CPU Core - High-Side Switch

文件：1.0065 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4412 uses advanced trench technology to provide excellent RDS(ON) and ultra low gate charge for use has a fast high side switch. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance.Standard product

文件：143.13 Kbytes 页数：4 Pages

AOSMD

万国半导体