首页 >AFN3414>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
N-ChannelLogicLevelMOSFET | AnalogPower Analog Power | AnalogPower | ||
N-ChannelEnhancementMode Features •VDS(V)=20V •ID=4.2A(VGS=4.5V) •RDS(ON) | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | KEXIN | ||
N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheAO3414usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas1.8V.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.StandardProductAO3414isPb-free(meetsROHS&Sony259spec | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
N-ChannelEnhancementMOSFET Features •VDS(V)=20V •ID=4.2A(VGS=4.5V) •RDS(ON) | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | KEXIN | ||
20VN-ChannelMOSFET | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
N-Channel20V(D-S)MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •DC/DCConverters •LoadSwitchforPortableApplications | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-ChannelEnhancementMode Features VDS(V)=20V ID=4.2A(VGS=4.5V) RDS(ON) | EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊欧翊欧半导体 | EVVOSEMI | ||
N-ChannelEnhancementMOSFET Features VDS(V)=20V ID=4.2A(VGS=4.5V) RDS(ON) | UMWGuangdong Youtai Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司 | UMW | ||
N-ChannelMOSFET Features ●VDS(V)=20V ●ID=4.2A(VGS=4.5V) ●RDS(ON) | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | KEXIN | ||
N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheAO3414usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas1.8V.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.StandardProductAO3414isPb-free(meetsROHS&Sony259spec | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD |
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