AF8958C

P & N-Channel 30-V (D-S) MOSFET

AF8958CS

P & N-Channel 30-V (D-S) MOSFET

AF8958CSA

P & N-Channel 30-V (D-S) MOSFET

AF8958CSL

P & N-Channel 30-V (D-S) MOSFET

AF8958CSLA

P & N-Channel 30-V (D-S) MOSFET

AM8958

NPPAIRENHANCEMENTMODE

DESCRIPTION TheAM8958istheN&P-Channelenhancement modepowerfieldeffecttransistorusinghighcell densityDMOStrenchtechnology.Thishighdensity processisespeciallytailoredtominimizeon-state resistanceandprovidesuperiorswitching performance.Thisdeviceisparticularly

AM8958C

P&N-Channel32-V(D-S)MOSFET

CEC8958A

DualEnhancementModeFieldEffectTransistor(NandPChannel)

FEATURES 30V,21A,RDS(ON)=26mW@VGS=10V. RDS(ON)=45mW@VGS=4.5V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. -30V,-16A,RDS(ON)=46mW@VGS=-10V. RDS(ON)=77mW@VGS=-4.5V.

CEM8958

DualEnhancementModeFieldEffectTransistor(NandPChannel)

FEATURES ●30V,5.3A,RDS(ON)=35mΩ@VGS=10V. RDS(ON)=50mΩ@VGS=4.5V. -30V,-4.0A,RDS(ON)=65mΩ@VGS=-10V. RDS(ON)=100mΩ@VGS=-4.5V. ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandin

CEM8958

P-ChanelandN-ChannelMOSFETuseadvancedtrenchtechnology