1550 MHz to 2150 MHz Rx Mixer with Integrated Fractional-N PLL and VCO

文件：517.82 Kbytes 页数：24 Pages

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亚德诺

包装：散装 类别：开发板，套件，编程器 射频评估和开发套件，开发板 描述：EVAL BOARD FOR ADRF6602

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亚德诺

DUAL ENHANCEMENT MODE MOSFET (N- AND P-CHANNEL)

DESCRIPTION AM6602 is available in a SOT-26 package. FEATURES  N-Channel 30V/4.9A, RDS(ON)=39mΩ(max.) @ VGS=10V RDS(ON)=68mΩ(max.) @ VGS=4.5V  P-Channel -30V/-3A, RDS(ON)=100mΩ(max.) @ VGS=-10V RDS(ON)=170mΩ(max.) @ VGS=-4.5V  Reliable and Rugged  Lead Free and Green Devices Avai

文件：883.14 Kbytes 页数：12 Pages

AITSEMI

创瑞科技

Low Noise JFET

文件：803.49 Kbytes 页数：7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Complementary Enhancement Mode Field Effect Transistor

General Description The AO6602 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. Standard Product AO6602 is Pb-free (meets ROHS & Sony 259 specifications). AO6

文件：146 Kbytes 页数：7 Pages

AOSMD

万国半导体