750 MHz to 1160 MHz Rx Mixer with Integrated Fractional-N PLL and VCO

文件：640.11 Kbytes 页数：24 Pages

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亚德诺

包装：散装 类别：开发板，套件，编程器 射频评估和开发套件，开发板 描述：EVAL BOARD FOR ADRF6601

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亚德诺

Low Noise JFET Amplifiers

文件：654.75 Kbytes 页数：4 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Complementary Enhancement Mode Field Effect Transistor

General Description The AO6601 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. Standard Product AO6601 is Pb-free (meets ROHS & Sony 259 specifications). AO6

文件：207.8 Kbytes 页数：7 Pages

AOSMD

万国半导体

N- and P-Channel V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC

文件：2.06917 Mbytes 页数：10 Pages

VBSEMI

微碧半导体