ADRF6601-EVALZ

750 MHz to 1160 MHz Rx Mixer with Integrated Fractional-N PLL and VCO

ADRF6601-EVALZ

包装：散装 类别：开发板，套件，编程器 射频评估和开发套件，开发板 描述：EVAL BOARD FOR ADRF6601

AN-6601

LowNoiseJFETAmplifiers

AO6601

ComplementaryEnhancementModeFieldEffectTransistor

GeneralDescription TheAO6601usesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.ThecomplementaryMOSFETsformahigh-speedpowerinverter,suitableforamultitudeofapplications.StandardProductAO6601isPb-free(meetsROHS&Sony259specifications).AO6

AO6601

N-andP-ChannelV(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC

AO6601

30VComplementaryMOSFET

AO6601

ComplementaryTrenchMOSFET

■Features N-Channel: ●VDS(V)=30V ●ID=3.4A(VGS=10V) ●RDS(ON)

AO6601

NPChannelMOSFET

Features N-Ch: *VDS(V)=30V *ID=3.4A(VGS=10V) *RDS(ON)60m(VGS=10V) *RDS(ON)70m(VGS=4.5V) *RDS(ON)90m(VGS=2.5V) P-Ch: *VDS(V)=-30V *ID=-2.3A(VGS=-10V) *RDS(ON)115m(VGS=-10V) *RDS(ON)150m(VGS=-4.5V) *RDS(ON)200m(VGS=-2.5V)

AO6601

NPChannelMOSFET

GeneralDescription TheAO6601usesadvancedtrenchtechnologyto provideexcellentRDS(ON)andlowgatecharge.The complementaryMOSFETsformahigh-speedpower inverter,suitableforamultitudeofapplications. Features N-Ch: VDS(V)=30V RDS(ON)

AO6601-HF

ComplementaryTrenchMOSFET

■Features N-Channel: ●VDS(V)=30V ●ID=3.4A(VGS=10V) ●RDS(ON)