Silicon SPDT Switch, Nonreflective

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亚德诺

包装：盒 类别：开发板，套件，编程器 射频评估和开发套件，开发板 描述：DEVELOPMENT AMPLIFIER

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亚德诺

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs

POWWE MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. • Faster Switching • Lower Leakage • 100 Avalanche Tested • Popular TO-247 Package

文件：96.09 Kbytes 页数：2 Pages

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isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Current :ID= 20A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high voltage, high speed power switching

文件：344.73 Kbytes 页数：2 Pages

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无锡固电

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs

POWWE MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. • Faster Switching • Lower Leakage • 100 Avalanche Tested • Popular TO-247 Package

文件：96.09 Kbytes 页数：2 Pages

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