BCY791X

PNPswitchingtransistors

DESCRIPTION PNPswitchingtransistorinaTO-18metalpackage. NPNcomplements:BCY58andBCY59. FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.45V).APPLICATIONS •Switchingandamplification. APPLICATIONS •Switchingandamplification.

BD791

POWERTRANSISTORSILICON

NPNPlasticSiliconPowerTransistor ...designedforlowpoweraudioamplifierandlow–current,highspeedswitchingapplications. •HighCollector–EmitterSustainingVoltage—VCEO(sus)=100Vdc(Min) •HighDCCurrentGain@IC=200mAdchFE=40–250 •LowCollector–EmitterSaturationV

BD791

ComplementaryPlasticSiliconPowerTransistors

...designedforlowpoweraudioamplifierandlow-current,highspeedswitchingapplications. •HighCollector-EmitterSustainingVoltage—VCEO(sus)=80Vdc(Win)—BD789,BD790=100Vdc(Min)—BD791,BD792 •HighDCCurrentGain@IQ=200mAdchpE=40-250 •LowCollector-EmitterSatura

BD791

iscSiliconNPNPowerTransistor

DESCRIPTION •HighCollector–EmitterSustainingVoltage—VCEO(sus)=100Vdc(Min) •HighDCCurrentGain@IC=200mAdchFE=40–250 •LowCollector–EmitterSaturationVoltage—VCE(sat)=0.5Vdc(Max)@IC=500mAdc APPLICATIONS •Designedforlowpoweraudioamplifierandlowcurrent,

BUL791

NPNSILICONPOWERTRANSISTOR

●DesignedSpecificallyforHighFrequencyElectronicBallastsupto125W ●hFE6to22atVCE=1V,IC=2A ●LowPowerLosses(On-stateandSwitching) ●KeyParametersCharacterisedatHighTemperature ●TightandReproducibleParametricDistributions

BUL791

NPNSILICONPOWERTRANSISTOR

BUL791

NPNSILICONPOWERTRANSISTOR

●DesignedSpecificallyforHighFrequencyElectronicBallastsupto125W ●hFE6to22atVCE=1V,IC=2A ●LowPowerLosses(On-stateandSwitching) ●KeyParametersCharacterisedatHighTemperature ●TightandReproducibleParametricDistributions

DRA791

InfotainmentApplicationsProcessor

FS791

LowEMISpectrumSpreadClock

G791B

T-1sizepanelmountindicator