AD8311-EVAL

50 dB GSM PA Controller

GENERALDESCRIPTION TheAD8311isacompletelowcostsubsystemfortheprecisecontrolofRFpoweramplifiersoperatinginthefrequencyrange0.1GHzto2.5GHzandoveratypicaldynamicrangeof50dB.Itisintendedforuseincellularhandsetsandotherbatteryoperatedwirelessdevices.The

AD8311-EVAL

50 dB GSM PA Controller

FEATURES CompleteRFdetector/controllerfunction >50dBrangeat0.9GHz(−48dBmto+3dBmre50Ω) Accuratescalingfrom0.1GHzto2.5GHz Temperature-stablelinear-in-dBresponse Logslopeof23mV/dB,interceptat−60dBmat0.9GHz Trueintegrationfunctionincontrolloop Lowpower:

BD8311NUV

Integrated2.5AMOSFET1chBoostConverter

BD8311NUV

High-efficiencyStep-upSwitchingRegulatorwithBuilt-inPowerMOSFET

BD8311NUV

High-efficiencyStep-upSwitchingRegulatorwithBuilt-inPowerMOSFET

GeneralDescription BD8311NUVisahigh-efficiencystep-upswitchingregulatorwithbuilt-inpowerMOSFETthatcanoutput8Vor10Vfroma4-batteryvoltagesupplysuchasLi2cellora5Vfixedpowersupplyline.Thebuilt-in80mΩN-ChannelFETswitchiscapableofhandlingoutputcurrentupto2

BU8311KS

Panelinterface

TheBU8310AK,BU8311KS,andBU8313Karelarge-scaleintegratedcircuitsfortelephones,whichenableaserialinput/outputinterfacebetweenthekeyinputrequiredfortelephonepanelboardsandLEDcontrolfunctions.Theyreducethenumberofwiringharnessesneededbetweenthemainboardinthe

BYM8311

CEM8311

DualP-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-30V,-7.9A,RDS(ON)=20mΩ@VGS=-10V. RDS(ON)=33mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.

CEM8311

DualP-ChannelEnhancementModeFieldEffectTransistor

FEATURES -30V,-7.9A,RDS(ON)=20mW@VGS=-10V. RDS(ON)=33mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Lead-freeplating;RoHScompliant.

CHM8311JPT

DualP-ChannelEnhancementModeFieldEffectTransistor