| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
N-CHANNEL80V(D-S)MOSFET DESCRIPTION TheUTC80N08isanN-channelMOSFETusingUTCadvancedtechnology.Itcanbeusedinapplications,suchaspowersupply(secondarysynchronousrectification),industrialandprimaryswitchetc. FEATURES *TrenchFETPowerMOSFETSTechnology | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-CHANNELMOSFETinaTO-220PlasticPackage | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | FOSHAN | ||
N-ChannelMOSFETusesadvancedSGTtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司 | DOINGTER | ||
N-CHANNELMOSFETinaTO-220PlasticPackage | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | FOSHAN | ||
N-CHANNELMOSFETinaTO-263PlasticPackage | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | FOSHAN | ||
100VN-ChannelMOSFET-D | FOSTERShenzhen Foster Semiconductor Co., Ltd. 福斯特半导体深圳市福斯特半导体有限公司 | FOSTER | ||
N-ChannelEnhancementModePowerMosfet-D | FOSTERShenzhen Foster Semiconductor Co., Ltd. 福斯特半导体深圳市福斯特半导体有限公司 | FOSTER | ||
N-ChannelEnhancementModePowerMosfet-D | FOSTERShenzhen Foster Semiconductor Co., Ltd. 福斯特半导体深圳市福斯特半导体有限公司 | FOSTER | ||
N-CHANNELMOSFET(75V/80A,Rds=6.5m廓) | FS First Silicon Co., Ltd | FS | ||
N-CHANNELMOSFET(80V/80A,Rds=8m廓) | FS First Silicon Co., Ltd | FS | ||
N-ChannelMOSFETusesadvancedSGTtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司 | DOINGTER | ||
80VN-ChannelTrenchMOSFET | SEMIHOW SemiHow Co.,Ltd. | SEMIHOW | ||
80VN-ChannelTrenchMOSFET | SEMIHOW SemiHow Co.,Ltd. | SEMIHOW | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=80A@TC=25℃ ·DrainSourceVoltage :VDSS=80V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=9mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
HIPERFET-TMMOSFETISOPLUS220-TM Features ●SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation ●Lowdraintotabcapacitance( | IXYS IXYS Integrated Circuits Division | IXYS | ||
N-ChannelEnhancementModeAvalancheRated,Highdv/dt | IXYS IXYS Integrated Circuits Division | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=80A@TC=25℃ ·DrainSourceVoltage- :VDSS=80V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=9mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelEnhancementModeAvalancheRated,Highdv/dt | IXYS IXYS Integrated Circuits Division | IXYS | ||
TO-220ISPACKAGE | KECKEC CORPORATION KEC株式会社 | KEC |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CS |
23+ |
TO-220C |
59945 |
绝对原厂原装,长期优势可定货 |
询价 | ||
ADI/亚德诺 |
23+ |
TO-220C |
6000 |
原装现货 |
询价 | ||
NK |
24+25+/26+27+ |
TO-252-3 |
18800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
CELDUC |
2008 |
全新原装 |
5000 |
询价 | |||
CELDUC |
22+ |
原厂原封 |
8200 |
全新原装现货!自家库存! |
询价 | ||
23+ |
N/A |
76800 |
一级代理放心采购 |
询价 | |||
NA |
2018+ |
NA |
6000 |
全新原装正品现货,假一赔佰 |
询价 | ||
NA |
23+ |
NA |
15000 |
全新原装现货,假一赔十 |
询价 | ||
APPLE |
23+ |
QFN |
90000 |
一定原装正品 |
询价 | ||
APPLE |
2102+ |
QFN |
6854 |
只做原厂原装正品假一赔十! |
询价 |
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