丝印：H2F；Package：SOT-23；High Performance, 145 MHz FastFET Op Amps

FEATURES Qualified for automotive applications FET input amplifier 1 pA input bias current Low cost High speed: 145 MHz, −3 dB bandwidth (G = +1) 180 V/μs slew rate (G = +2) Low noise 7 nV/√Hz (f = 10 kHz) 0.6 fA/√Hz (f = 10 kHz) Wide supply voltage range: 5 V to 24 V Single-supply and

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High Performance, 145 MHz FastFET Op Amps

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亚德诺

High Performance, 145 MHz FastFET Op Amps

文件：617.51 Kbytes 页数：29 Pages

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Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast

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Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast

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Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.

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