ACE4614B

30V Complementary Enhancement Mode Field Effect Transistor

Description TheACE4614BusesadvancedtrenchtechnologyMOSFETstoprovideexcellentRDS(ON)andlowgatecharge.ThecomplementaryMOSFETsmaybeusedininverterandotherapplications. Features N-channel •VDS=30V •ID=9A •RDS(ON)

ACE4614BFM+H

60V Complementary Enhancement Mode Power MOSFET

Description ⚫usedininverter ⚫otherapplications Features N-Channel ⚫VDS=60V ⚫ID=5.2A ⚫RDS(ON)@VGS=10V,TYP27mΩ ⚫RDS(ON)@VGS=4.5V,TYP34mΩ P-Channel ⚫VDS=-60V ⚫ID=-4.2A ⚫RDS(ON)@VGS=-10V,TYP50mΩ ⚫RDS(ON)@VGS=-4.5V,TYP62mΩ

ADM4614S

40VN&P-ChannelPowerTrench

AK4614

6/12-ChannelAudioCODEC

AK4614VQ

6/12-ChannelAudioCODEC

AKD4614

6/12-ChannelAudioCODEC

AO4614

ComplementaryEnhancementModeFieldEffectTransistor

GeneralDescription TheAO4614usesadvancedtrenchtechnologyMOSFETstoprovideexcellentRDS(ON)andlowgatecharge.ThecomplementaryMOSFETsmaybeusedinH-bridge,Invertersandotherapplications.StandardProductAO4614isPb-free(meetsROHS&Sony259specifications).AO4614Lis

AO4614

N-andP-Channel30V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100RgandUISTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •MotorDrive •MobilePowerBank

AO4614

40VP-ChannelandN-ChannelMOSFET

ProductSummary N-ChannelP-Channel VDS(V)=40V,-40V ID=6A(VGS=10V)-5A(VGS=-10V) RDS(ON)

AO4614

40VP-ChannelandN-ChannelMOSFET

GeneralDescription TheAO4614usesadvancedtrenchtechnology MOSFETstoprovideexcellentRDS(ON)andlowgate charge.ThecomplementaryMOSFETsmaybeused inH-bridge,Invertersandotherapplications.