AO3400

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAO3400usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas2.5V.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.StandardProductAO3400isPb-free(meetsROHS&Sony259spec

AO3400

30VN-ChannelEnhancementModeMOSFET

30VN-ChannelEnhancementModeMOSFET VDS=30V RDS(ON),Vgs@10V,Ids@5.8A

AO3400

N-Channelenhancementmodefieldeffecttransistor

■Features ●VDS(V)=30V ●ID=5.8A(VGS=10V) ●RDS(ON)28m(VGS=10V) ●RDS(ON)33m(VGS=4.5V) ●RDS(ON)52m(VGS=2.5V)

AO3400

N-CHANNELMOSFETinaSOT-23PlasticPackage

Descriptions N-CHANNELMOSFETinaSOT-23PlasticPackage. Features VDS(V)=30V ID=5.8A(VGS=10V) RDS(ON)

AO3400

30VN-ChannelMOSFET

AO3400

N-Channel30-V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •DC/DCConverter

AO3400

N-ChannelEnhancementMOSFET

Features VDS(V)=30V ID=5.8A(VGS=10V) RDS(ON)m(VGS=10V) RDS(ON)3m(VGS=4.5V) RDS(ON)52m(VGS=2.5V)

AO3400

N-ChannelEnhancementMOSFET

Features VDS(V)=30V ID=5.8A(VGS=10V) RDS(ON)

AO3400A

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAO3400AusesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.StandardProductAO3400AisPb-free(meetsROHS&Sony259specifications). Features •VDS(V)=30V •

AO3400A

30VN-ChannelMOSFET