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N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 2.5A, RDS(ON) = 280mW @VGS = 10V. RDS(ON) = 330mW @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-89 package. RoHS compliant.

文件：478.15 Kbytes 页数：5 Pages

CET-MOS

华瑞