ACE12008A中文资料ACE数据手册PDF规格书

描述 Description

The ACE12008A is the N&P Channel enhancement mode power field effect transistors are produced

using high cell density, DMOS trench technology. This high-density process is especially tailored to

minimize on-state resistance and provide superior switching performance. These devices are particularly

suited for low voltage applications such as notebook computer power management and other battery

powered circuits where high-side switching, low in-line power loss, and resistance to transients are

needed.

特性 Features

⚫ N-Channel

20V/0.65A, RDS(ON)=380mΩ@VGS=4.5V

20V/0.55A, RDS(ON)=450mΩ@VGS=2.5V

20V/0.45A, RDS(ON)=800mΩ@VGS=1.8V

⚫ P-Channel

-20V/0.45A, RDS(ON)= 520mΩ @VGS=-4.5V

-20V/0.35A, RDS(ON)= 700mΩ @VGS=-2.5V

-20V/0.25A, RDS(ON)= 1500mΩ @VGS=-1.8V

⚫ Super high-density cell design for extremely low RDS (ON)

⚫ Exceptional on-resistance and maximum DC current capability

Application

⚫ Power Management in Note book

⚫ Portable Equipment

⚫ Battery Powered System

⚫ DC/DC Converter

⚫ Load Switch

⚫ DSC

⚫ LCD Display inverter