CPC2017N

8-PinDualSOICOptoMOS짰Relay

CPC2017N

DualNormallyOpen8-PinSOICOptoMOS짰Relay

CPC2017NTR

8-PinDualSOICOptoMOS짰Relay

CPEX2017L

HighCurrentPowerInductor

Features： ▪Corematerial:Composite ▪Coreandwindingloss: See https://www.codaca.com/DesignTool_Power-Inductor-Loss-Comparison.h tml ▪Environmental:RoHScompliant,halogenfree ▪Weight:31.5g ▪MoistureSensitivity:Level(MSL)1 (unlimitedfloorlifeat

CZRB2017

SurfaceMountZenerDiode

Voltage:11-100VoltsPower:2.0Watt Features -Forsurfacemountedapplicationsinordertooptimizeboardspace -Lowprofilepackage -Built-instrainrelief -Glasspassivatedjunction -Lowinductance -Excellentclampingcapability -TypicalIlessthan1uAabove11VD -Highte

D2017M

N-ChannelSiliconMOSFETGeneral-PurposeSwitchingDeviceApplications

General-PurposeSwitchingDeviceApplications Features •LowON-resistance. •2.5Vdrive. •Mountheight1.1mm. •Compositetype,facilitatinghigh-densitymounting. •Draincommonspecifications.

D2017UK

METALGATERFSILICONFET

GOLDMETALLISEDMULTI-PURPOSESILICONDMOSRFFET5W–28V–1GHzSINGLEENDED FEATURES •SIMPLIFIEDAMPLIFIERDESIGN •SUITABLEFORBROADBANDAPPLICATIONS •LOWCrss •SIMPLEBIASCIRCUITS •LOWNOISE •HIGHGAIN–13dBMINIMUM APPLICATIONS •VHF/UHFCOMMUNICATIONSfromDCto1GHz

DG2017

Low-Voltage,LowRON,DualDPDTAnalogSwitch

DG2017

Low-Voltage,LowON,DualDPDTAnalogSwitch

DESCRIPTION TheDG2017isadualDPDT(double-pole/double-throw),optimizedforhighperformanceanalogswitching,andspecificallydesignedtobenefitportableaudioapplications. FEATURES •Halogen-freeaccordingtoIEC61249-2-21Definition •Lowvoltageoperation(2Vto5.5V) •Lowon-r

DG2017

Low-Voltage,LowRON,DualDPDTAnalogSwitch

FEATURES •Lowvoltageoperation(2Vto5.5V) •Lowon-resistanceat2.7V-RON: SW1,SW2-3.2 SW3,SW4-0.64 •Fastswitching:tON=46ns tOFF=21ns •QFN-16(4mmx4mm)package •Materialcategorization:Fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912