ADR440BRZ

UltralowNoise,LDOXFETVoltageReferenceswithCurrentSinkandSource

GENERALDESCRIPTION TheADR44xseriesisafamilyofXFET®voltagereferencesfeaturingultralownoise,highaccuracy,andlowtemperaturedriftperformance.UsingAnalogDevices,Inc.,patentedtemperaturedriftcurvaturecorrectionandXFET(eXtraimplantedjunctionFET)technology,voltagecha

ADUM440X

DigitalIsolatorProductSelectionandResourceGuide

AHRS440

MEMS-BASEDAHRSSYSTEM

Features Roll,Pitch,Headingand9DOF InertialOutputs Accuracy100Hz High-RangeSensorOptions (400deg/secand10g) GPSAidingInput LowPower25,000hours AnalogOutputOption RuggedSealedEnclosure Application

AL440B

4Mbits(512kx8-bit)FIFOmemory

AL440B

4M-BitHighSpeedFIFOFieldMemory

AMA440N

N-Channel40-V(D-S)MOSFET

AN440

QIIandQIIITRIACtriggeringwithpositivepowersupply

AOB440

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAOB440usesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.ThisdeviceissuitableforuseinUPS,highcurrentswitchingapplications.StandardProductAOB440isPb-free(meetsROHS&Sony259specifications). Features V

AOB440

iscN-ChannelMOSFETTransistor

•DESCRITION •Besuitableforsynchronousrectificationforserverand generalpurposeapplications •FEATURES •DrainCurrent–ID=75A@TC=25℃ •DrainSourceVoltage- :VDSS=60V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=7.5mΩ(Max) •100avalanchetested •Minimum

AOT440

40VN-ChannelMOSFET