首页 >A3172A>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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HighCurrentLEDFlashDriverChargePumpIC GeneralDescription TheAAT3172isahighoutputcurrent,highefficiency,lownoise,lowprofilechargepumpDC/DCconverter,idealformulti-functionLEDphoto-flashapplicationswheresolutioncost,size,andefficiencyarecritical. Features •VINRange:2.7Vto5.5V •600mAOutputCurrent | AATAdvanced Analog Technology, Inc. 台湾类比科技台湾类比科技股份有限公司 | AAT | ||
HighCurrentLEDFlashDriverChargePumpIC GeneralDescription TheAAT3172isahighoutputcurrent,highefficiency,lownoise,lowprofilechargepumpDC/DCconverter,idealformulti-functionLEDphoto-flashapplicationswheresolutioncost,size,andefficiencyarecritical. Features •VINRange:2.7Vto5.5V •600mAOutputCurrent | ANALOGICTECHAdvanced Analogic Technologies 研诺科技香港研诺逻辑科技有限公司 | ANALOGICTECH | ||
HighCurrentLEDFlashDriverChargePumpIC | ANALOGICTECHAdvanced Analogic Technologies 研诺科技香港研诺逻辑科技有限公司 | ANALOGICTECH | ||
HighCurrentLEDFlashDriverChargePump Features •VINRange:2.7Vto5.5V •600mAOutputCurrent •Tri-Mode1X/1.5X/2XinCurrentMode •VoltageModeOperation:1.5X,100mA •DualRegulatedCurrentSinks •CurrentMatchBetweenCurrentSinks •32CurrentStepsSetbyAS2Cwire •1μFInput,Output,andFlyingCapacitors • | SKYWORKSSkyworks Solutions Inc. 思佳讯美国思佳讯公司 | SKYWORKS | ||
Thisapplicationnotedescribestheperformanceofa90W | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
2C14SOLIDBCHALAROASFLEXFireAlarm/LifeSafetyCable | GENERALGeneral Cable Technologies Corporation 通用电气公司美国通用电气公司 | GENERAL | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■30V,36A,RDS(ON)=20mΩ@VGS=10V. RDS(ON)=28mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package. | CETChino-Excel Technology 华瑞华瑞股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 30V,36A,RDS(ON)=20mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=32mW@VGS=4.5V. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■30V,8.9A,RDS(ON)=20mΩ@VGS=10V. RDS(ON)=28mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage. | CETChino-Excel Technology 华瑞华瑞股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■30V,36A,RDS(ON)=20mΩ@VGS=10V. RDS(ON)=28mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package. | CETChino-Excel Technology 华瑞华瑞股份有限公司 | CET |
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