RF Power GaN Transistor

文件：270.08 Kbytes 页数：10 Pages

恩XP

RF Power GaN Transistor

文件：270.08 Kbytes 页数：10 Pages

恩XP

2496-2690 MHz，50 W 平均值，48 V Airfast®射频功率GaN晶体管

The A2G26H281-04S 50 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2496 to 2690 MHz.This part is characterized and performance is guaranteed for applications ope • High terminal impedances for optimal broadband performance\n• Advanced high performance in-package Doherty\n• Able to withstand extremely high output VSWR and broadband operating conditions\n• RoHS compliant;

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