A23

文件：127.17 Kbytes 页数：1 Pages

ENERGIZER

劲量

Process Sealed Subminiature Toggles

文件：213.19 Kbytes 页数：7 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

NEON with SIMD and VFPv4 support

文件：1.68455 Mbytes 页数：35 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

丝印：A23；Package：MSOP；Low Cost Micropower, Low Noise CMOS Rail-to-Rail, Input/Output Operational Amplifiers

FEATURES Offset voltage: 2.2 mV maximum Low input bias current: 1 pA maximum Single-supply operation: 1.8 V to 5.5 V Low noise: 22 nV/√Hz Micropower: 50 μA/amplifier maximum over temperature No phase reversal Unity gain stable Qualified for automotive applications APPLICATIONS Battery-po

文件：290.47 Kbytes 页数：16 Pages

AD

亚德诺

丝印：A23；Package：SMA；2.0A Surface Mount General Purpose Rectifiers - 50V-1000V

文件：254.85 Kbytes 页数：5 Pages

E-CMOS

飞虹高科

丝印：A23；Package：SMA；2.0A Surface Mount General Purpose Rectifiers - 50V-1000V

文件：254.85 Kbytes 页数：5 Pages

E-CMOS

飞虹高科

丝印：A23；Package：FBP1608-02L；Middle Power Schottky Barrier Diode

文件：416.74 Kbytes 页数：4 Pages

WILLSEMIWill Semiconductor Co.,Ltd.

韦尔股份上海韦尔半导体股份有限公司

丝印：A23；Package：FBP1608-02L；Middle Power Schottky Barrier Diode

文件：416.74 Kbytes 页数：4 Pages

WILLSEMIWill Semiconductor Co.,Ltd.

韦尔股份上海韦尔半导体股份有限公司

10 TO 250 MHz CASCADABLE AMPLIFIER

Description The A231 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. Features • LOW NOISE FIGURE: 1.7 dB (TYP.) • HIGH GAIN: 26.0 dB (TYP.) • HIGH EFFICIENCY: 16 mA at +5 Vdc • MEDIUM OUTPUT LEVEL: +14

文件：109.49 Kbytes 页数：1 Pages

MACOM

Cascadable Amplifier 10 to 250 MHz

Description The A231 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. The 2 stage silicon bipolar feedback amplifier design displays impressive performance over a broadband frequency range. An isolation transfor

文件：1.34125 Mbytes 页数：2 Pages

MA-COM