首页 >9NA80>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
N-CHANNEL800V-0.85ohm-9.1A-TO-247/ISOWATT218FASTPOWERMOSTRANSISTOR N-CHANNEL800V-0.85Ω-9.1A-TO-247/ISOWATT218FASTPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.85Ω ■±30VGATETOSOURCEVOLTAGERATING ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWINTRINSICCAPACITANCES ■GATECHARGEMINIMIZED ■REDUCEDTHRESHOLDVOLTAGESPREAD | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
N-CHANNEL800V-0.85ohm-9.1A-TO-247/ISOWATT218FASTPOWERMOSTRANSISTOR N-CHANNEL800V-0.85Ω-9.1A-TO-247/ISOWATT218FASTPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.85Ω ■±30VGATETOSOURCEVOLTAGERATING ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWINTRINSICCAPACITANCES ■GATECHARGEMINIMIZED ■REDUCEDTHRESHOLDVOLTAGESPREAD | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
N-CHANNEL800V-0.85Q-9.1A-TO-247/ISOWATT218FASTPOWERMOSTRANSISTOR N-CHANNEL800V-0.85Ω-9.1A-TO-247/ISOWATT218FASTPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.85Ω ■±30VGATETOSOURCEVOLTAGERATING ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWINTRINSICCAPACITANCES ■GATECHARGEMINIMIZED ■REDUCEDTHRESHOLDVOLTAGESPREAD | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
N-CHANNEL800V-0.85Q-9.1A-TO-247/ISOWATT218FASTPOWERMOSTRANSISTOR N-CHANNEL800V-0.85Ω-9.1A-TO-247/ISOWATT218FASTPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.85Ω ■±30VGATETOSOURCEVOLTAGERATING ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWINTRINSICCAPACITANCES ■GATECHARGEMINIMIZED ■REDUCEDTHRESHOLDVOLTAGESPREAD | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=5.9A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.0Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=9.4A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.0Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-CHANNEL800V-0.85ohm-9.1A-TO-247/ISOWATT218FASTPOWERMOSTRANSISTOR N-CHANNEL800V-0.85Ω-9.1A-TO-247/ISOWATT218FASTPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.85Ω ■±30VGATETOSOURCEVOLTAGERATING ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWINTRINSICCAPACITANCES ■GATECHARGEMINIMIZED ■REDUCEDTHRESHOLDVOLTAGESPREAD | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
N-CHANNEL800V-0.85Q-9.1A-TO-247/ISOWATT218FASTPOWERMOSTRANSISTOR N-CHANNEL800V-0.85Ω-9.1A-TO-247/ISOWATT218FASTPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.85Ω ■±30VGATETOSOURCEVOLTAGERATING ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWINTRINSICCAPACITANCES ■GATECHARGEMINIMIZED ■REDUCEDTHRESHOLDVOLTAGESPREAD | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
N-CHANNEL800V-0.85Q-9.1A-TO-247/ISOWATT218FASTPOWERMOSTRANSISTOR N-CHANNEL800V-0.85Ω-9.1A-TO-247/ISOWATT218FASTPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.85Ω ■±30VGATETOSOURCEVOLTAGERATING ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWINTRINSICCAPACITANCES ■GATECHARGEMINIMIZED ■REDUCEDTHRESHOLDVOLTAGESPREAD | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI |
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