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9N60M2

N-Channel 650V (D-S) Power MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

STD9N60M2

Extremelylowgatecharge

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusinganewgenerationofMDmesh™technology:MDmeshIIPlus™lowQg.TheserevolutionaryPowerMOSFETsassociateaverticalstructuretothecompanysstriplayouttoyieldoneoftheworldsloweston-resistanceandgatecharge.They

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STF9N60M2

N-channel600V,0.72??typ.,5.5AMDmeshIIPlus??lowQgPowerMOSFETsinTO-220FPandI2PAKFPpackages

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusinganewgenerationofMDmesh™technology:MDmeshIIPlus™lowQg.TheserevolutionaryPowerMOSFETsassociateaverticalstructuretothecompanysstriplayouttoyieldoneoftheworldsloweston-resistanceandgatecharge.They

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STFI9N60M2

N-channel600V,0.72??typ.,5.5AMDmeshIIPlus??lowQgPowerMOSFETsinTO-220FPandI2PAKFPpackages

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusinganewgenerationofMDmesh™technology:MDmeshIIPlus™lowQg.TheserevolutionaryPowerMOSFETsassociateaverticalstructuretothecompanysstriplayouttoyieldoneoftheworldsloweston-resistanceandgatecharge.They

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STL9N60M2

N-channel600V,0.76??typ.,4.8AMDmeshIIPlus??lowQgPowerMOSFETinaPowerFLAT??5x6HVpackage

Description ThisdeviceisanN-channelPowerMOSFET developedusinganewgenerationofMDmesh™ technology:MDmeshIIPlus™lowQg.This revolutionaryPowerMOSFETassociatesa verticalstructuretothecompany'sstriplayoutto yieldoneoftheworld'sloweston-resistanceand gatecharge

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STP9N60M2

Extremelylowgatecharge

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusinganewgenerationofMDmesh™technology:MDmeshIIPlus™lowQg.TheserevolutionaryPowerMOSFETsassociateaverticalstructuretothecompanysstriplayouttoyieldoneoftheworldsloweston-resistanceandgatecharge.They

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STP9N60M2

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

STU9N60M2

Extremelylowgatecharge

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusinganewgenerationofMDmesh™technology:MDmeshIIPlus™lowQg.TheserevolutionaryPowerMOSFETsassociateaverticalstructuretothecompanysstriplayouttoyieldoneoftheworldsloweston-resistanceandgatecharge.They

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

供应商型号品牌批号封装库存备注价格
23+
N/A
46580
正品授权货源可靠
询价
VB
2019
TO-220FP
55000
绝对原装正品假一罚十!
询价
VBSEMI
19+
TO-220FP
29600
绝对原装现货,价格优势!
询价
MAGNACHIP/美格纳
23+
TO-220F
50000
绝对原厂原装,长期优势可定货
询价
MAGNACHIP/美格纳
2023+
8700
原装现货
询价
MAGNACHIP/美格纳
23+
TO-220F
6000
专业美格纳MOS管
询价
1948+
TO-252
18562
只做原装正品现货!或订货假一赔十!
询价
UTC
23+
TO-TO-220F
33500
全新原装真实库存含13点增值税票!
询价
UTC
2020+
TO-220
45820
公司代理品牌,原装现货超低价清仓!
询价
UBIQ
23+
TO220F
15000
全新原装现货,价格优势
询价
更多9N60M2供应商 更新时间2024-4-29 9:36:00