98AON04079D中文资料安森美半导体数据手册PDF规格书

This device employs the Schottky Barrier principle in a

metal−to−silicon power rectifier. Features epitaxial construction with

oxide passivation and metal overlay contact. Ideally suited for low

voltage, high frequency switching power supplies; free wheeling

diodes and polarity protection diodes.

特性 Features

• Compact Package with J−Bend Leads Ideal for Automated Handling

• Highly Stable Oxide Passivated Junction

• Guard−Ring for Overvoltage Protection

• Low Forward Voltage Drop

• NBR and NRVB Prefixes for Automotive and Other Applications

Requiring Unique Site and Control Change Requirements;

AEC−Q101 Qualified and PPAP Capable*

Mechanical Characteristics

• Case: Molded Epoxy

• Epoxy Meets UL 94 V−0 @ 0.125 in

• Weight: 70 mg (SMA), 95 mg (SMB) (Approximately)

• Cathode Polarity Band

• Lead and Mounting Surface Temperature for Soldering Purposes:

260°C Max. for 10 Seconds

• Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

• ESD Ratings:

♦ Charged Device Model > 1000 V (Class C5)

♦ Human Body Model = 3B

• These Devices are Pb−Free and are RoHS Compliant

• Device Meets MSL1 Requirements