30V N-Channel Trench MOSFET(Preliminary)

Features  Trench Power Technology  Low RDS(ON)  Low Gate Charge  Optimized for Fast-switching Applications Applications  Synchronous Rectification in DC/DC and AC/DC Converters  Isolated DC/DC Converters in Telecom and Industrial

文件：404.38 Kbytes 页数：8 Pages

WUMC

紫光国微

丝印：90N03AT；Package：DFN5x6；30V N-Channel Trench MOSFET(Preliminary)

Features  Trench Power Technology  Low RDS(ON)  Low Gate Charge  Optimized for Fast-switching Applications Applications  Synchronous Rectification in DC/DC and AC/DC Converters  Isolated DC/DC Converters in Telecom and Industrial

文件：404.4 Kbytes 页数：8 Pages

WUMC

紫光国微

丝印：90N03AT；Package：DFN5x6；30V N-Channel Trench MOSFET(Preliminary)

Features  Trench Power Technology  Low RDS(ON)  Low Gate Charge  Optimized for Fast-switching Applications Applications  Synchronous Rectification in DC/DC and AC/DC Converters  Isolated DC/DC Converters in Telecom and Industrial

文件：404.38 Kbytes 页数：8 Pages

WUMC

紫光国微

N-Channel Enhancement Mode Field Effect Transistor

文件：565.96 Kbytes 页数：7 Pages

ADV

爱德微

N-Channel Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Lead-Free,RoHS Compliant Description: The ADM90N03Q uses advanced trench technology and design to provide excellent RDS(ON) with

文件：842.82 Kbytes 页数：6 Pages

ADV

爱德微

N-channel 30V - 0.005廓 - 80A - DPAK/IPAK STripFET??III Power MOSFET

Description This device utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology. This is suitable for the most demanding DC-DC converter application where high efficiency is to be achieved. General features ■ RDS(on)*Qg industry’s benchmark ■ Conduction losses reduce

文件：314.24 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体