89C1632RPQE-25中文资料MAXWELL数据手册PDF规格书

DESCRIPTION:

Maxwell Technologies’ 89C1632 high-performance 16 Mega bit Multi-Chip Module (MCM) Static Random Access Memory features a greater than 100 krad (Si) total dose tolerance, depending upon space mission. The four 4-Megabyte SRAM die and bypass capacitors are incorporated into a high-reliable hermetic quad flat-pack ceramic package.

FEATURES:

• Four 512k x 8 SRAM architecture

• RAD-PAK® technology hardens against natural space radiation technology

• Total dose hardness:

- > 100 krad (Si), depending upon space mission

• Excellent Single Event Effects:

- SEL > 68 MeV/mg/cm2

- SEU threshold = 3 MeV/mg/cm2

- SEU saturated cross section: 6E-9 cm2/bit

• Package: 68-pin quad flat package

• Fast access time: 20, 25 and 30 ns

• Completely static memory - no clock or timing strobe required

• Internal bypass capacitor

• High-speed silicon-gate CMOS technology

• 5V or 3V ± 10 power supply

• Equal address and chip enable access times

• Three-state outputs

• All inputs and outputs are TTL compatible