86116C-IRC

Wide-Bandwidth Oscilloscope Mainframe and Modules

86116C

Wide-BandwidthOscilloscopeMainframeandModules

86116C

Wide-BandwidthOscilloscopeMainframeandModules

FDMC86116LZ

N-ChannelPowerMOSFET

Features •MaxRDS(on)=103matVGS=10V,ID=3.3A •MaxRDS(on)=153matVGS=4.5V,ID=2.7A •HBMESDProtectionLevel>3kVTypical(Note1) •100UILTested •TheseDevicesarePb−FreeandareRoHSCompliant Applications •DC−DCConversion GeneralDescription ThisN

FDMC86116LZ

N-ChannelPowerTrenchMOSFET100V,7.5A,103m廓

ITF86116SQT

10A,30V,0.012Ohm,N-Channel,LogicLevel,PowerMOSFET

Features •UltraLowOn-Resistance -rDS(ON)=0.012Ω,VGS=10V -rDS(ON)=0.016Ω,VGS=4.5V •GatetoSourceProtectionDiode •SimulationModels -TemperatureCompensatedPSPICE™andSABERElectricalModels -SpiceandSABERThermalImpedanceModels -www.intersil.

Z86116

CMOSZ8PNMODULATORWIRELESSCONTROLLER

GENERALDESCRIPTION TheZ86116WirelessControllerisamemberoftheZ8®single-chipmicrocontrollerfamilybasedonZilog’s8-bitmicrocontrollercore.TheZ86116isdesignedwithspecificfeaturesforwirelessspreadspectrumapplicationsusingdirectsequencepseudo-noise(PN)modulation. Th