丝印：811；Package：SOT-23；NPN Low Vce(sat) Transistor

Features  Silicon NPN epitaxial type  Low Vce(sat) 0.35V(max)@Ic/Ib= 500mA / 50mA  High collector current capability  Excellent DC current gain characteristics  Lead free in comply with EU RoHS 2.0  Green molding compound as per IEC61249 Standard  PNP complement: PBHV9110DA

文件：401.95 Kbytes 页数：6 Pages

PANJIT

強茂

丝印：811；Package：SOT-23；NPN Low Vce(sat) Transistor

Features  Silicon NPN epitaxial type  Low Vce(sat) 0.35V(max)@Ic/Ib= 500mA / 50mA  High collector current capability  Excellent DC current gain characteristics  AEC-Q101 qualified  Lead free in comply with EU RoHS 2.0  Green molding compound as per IEC61249 Standard  PNP complement

文件：402.26 Kbytes 页数：6 Pages

PANJIT

強茂

丝印：811；Shielded Low-Noise Amplifier Front-End Module with Pre-Filter for GPS L5 Applications

Applications • GPS L5 radio receivers • Fitness/activity trackers • Smartphones • Laptop PCs and tablets Features • Innovative proprietary shielded technology • Wideband pre-filter • Small signal gain: 16 dB typical • Excellent out-of-band rejection • Low noise figure: 1.6 dB typical

文件：1.00712 Mbytes 页数：10 Pages

SKYWORKS

思佳讯

丝印：8110DW；Package：SOT-223；NPN Low Vce(sat) Transistor

Features  Silicon NPN epitaxial type  Low Vce(sat) 0.35V(max)@Ic/Ib= 500mA / 50mA  High collector current capability  Excellent DC current gain characteristics  AEC-Q101 qualified  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC61249 Standard  PNP comple

文件：402.56 Kbytes 页数：6 Pages

PANJIT

強茂

丝印：811D；Package：SOT-89；NPN Low Vce(sat) Transistor

Features  Silicon NPN epitaxial type  Low Vce(sat) 0.35V(max)@Ic/Ib= 500mA / 50mA  High collector current capability  Excellent DC current gain characteristics  AEC-Q101 qualified  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC61249 Standard  PNP comple

文件：383.65 Kbytes 页数：6 Pages

PANJIT

強茂

丝印：811R；Package：VQFN；DP83TC811-Q1 Low Power Automotive 100BASE-T1 Ethernet Physical Layer Transceiver

1 Features • 100BASE-T1 – IEEE 802.3bw compliant – OPEN alliance qualified – Interoperable with BroadR-Reach and 100BASE-T1 PHYs • AEC-Q100 Qualified for automotive applications: – Device temperature grade 1: –40°C to +125 °C ambient operating temperature – Device HBM ESD classification le

文件：3.0261 Mbytes 页数：140 Pages

TI

德州仪器

丝印：811R；Package：VQFN；DP83TC811-Q1 Low Power Automotive 100BASE-T1 Ethernet Physical Layer Transceiver

1 Features • 100BASE-T1 – IEEE 802.3bw compliant – OPEN alliance qualified – Interoperable with BroadR-Reach and 100BASE-T1 PHYs • AEC-Q100 Qualified for automotive applications: – Device temperature grade 1: –40°C to +125 °C ambient operating temperature – Device HBM ESD classification le

文件：3.0261 Mbytes 页数：140 Pages

TI

德州仪器

丝印：811S；Package：VQFN；DP83TC811-Q1 Low Power Automotive 100BASE-T1 Ethernet Physical Layer Transceiver

1 Features • 100BASE-T1 – IEEE 802.3bw compliant – OPEN alliance qualified – Interoperable with BroadR-Reach and 100BASE-T1 PHYs • AEC-Q100 Qualified for automotive applications: – Device temperature grade 1: –40°C to +125 °C ambient operating temperature – Device HBM ESD classification le

文件：3.0261 Mbytes 页数：140 Pages

TI

德州仪器

丝印：811S；Package：VQFN；DP83TC811-Q1 Low Power Automotive 100BASE-T1 Ethernet Physical Layer Transceiver

1 Features • 100BASE-T1 – IEEE 802.3bw compliant – OPEN alliance qualified – Interoperable with BroadR-Reach and 100BASE-T1 PHYs • AEC-Q100 Qualified for automotive applications: – Device temperature grade 1: –40°C to +125 °C ambient operating temperature – Device HBM ESD classification le

文件：3.0261 Mbytes 页数：140 Pages

TI

德州仪器

丝印：81100FRTZ；Package：QFN；100V Synchronous Buck Controller

▪ Wide input voltage range: 4.5V to 100V ▪ Wide output voltage range: 0.8V to 96V ▪ Two MOSFET drivers with adaptive shoot-through protection ▪ Constant output voltage and output current feedback loop control ▪ Light-load efficiency enhancement • Low ripple diode emulation mode operation ▪

文件：1.88634 Mbytes 页数：36 Pages

RENESAS

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