首页 >74VHCT08ASJ_Q>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
Quad2-inputANDgate | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
Quad2-InputANDGate | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
QUAD2-INPUTANDGATE DESCRIPTION The74VHCT08Aisanadvancedhigh-speedCMOSQUAD2-INPUTANDGATEfabricatedwithsub-micronsilicongateanddouble-layermetalwiringC2MOStechnology. ■HIGHSPEED:tPD=4.7ns(TYP.)atVCC=5V ■LOWPOWERDISSIPATION:ICC=2µA(MAX.)atTA=25°C ■COMPATIBLEWITHTTLOUTPU | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
Quad2-InputANDGate GeneralDescription TheVHCT08AisanadvancedhighspeedCMOS2InputANDGatefabricatedwithsilicongateCMOStechnology.Itachievesthehigh-speedoperationsimilartoequivalentBipolarSchottkyTTLwhilemaintainingtheCMOSlowpowerdissipation. Features ■Highspeed:tPD=5.0ns(typ | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
QUAD2-INPUTANDGATE | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
CMOSDigitalIntegratedCircuitsSiliconMonolithic FunctionalDescription •Quad2-InputANDGate General The74VHCT08AFTisanadvancedhighspeedCMOS2-INPUTANDGATEfabricatedwithsilicongateC2MOS technology. ItachievesthehighspeedoperationsimilartoequivalentBipolarSchottkyTTLwhilemaintainingtheCMOS lowpowerdissipa | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | TOSHIBA | ||
Quad2-InputANDGate | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
Quad2-InputANDGate GeneralDescription TheVHCT08AisanadvancedhighspeedCMOS2InputANDGatefabricatedwithsilicongateCMOStechnology.Itachievesthehigh-speedoperationsimilartoequivalentBipolarSchottkyTTLwhilemaintainingtheCMOSlowpowerdissipation. Features ■Highspeed:tPD=5.0ns(typ | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
QUAD2-INPUTANDGATE DESCRIPTION The74VHCT08Aisanadvancedhigh-speedCMOSQUAD2-INPUTANDGATEfabricatedwithsub-micronsilicongateanddouble-layermetalwiringC2MOStechnology. ■HIGHSPEED:tPD=4.7ns(TYP.)atVCC=5V ■LOWPOWERDISSIPATION:ICC=2µA(MAX.)atTA=25°C ■COMPATIBLEWITHTTLOUTPU | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
Quad2-InputANDGate GeneralDescription TheVHCT08AisanadvancedhighspeedCMOS2InputANDGatefabricatedwithsilicongateCMOStechnology.Itachievesthehigh-speedoperationsimilartoequivalentBipolarSchottkyTTLwhilemaintainingtheCMOSlowpowerdissipation. Features ■Highspeed:tPD=5.0ns(typ | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
Quad2-InputANDGate | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
Quad2-InputANDGate GeneralDescription TheVHCT08AisanadvancedhighspeedCMOS2InputANDGatefabricatedwithsilicongateCMOStechnology.Itachievesthehigh-speedoperationsimilartoequivalentBipolarSchottkyTTLwhilemaintainingtheCMOSlowpowerdissipation. Features ■Highspeed:tPD=5.0ns(typ | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
Quad2-InputANDGate GeneralDescription TheVHCT08AisanadvancedhighspeedCMOS2InputANDGatefabricatedwithsilicongateCMOStechnology.Itachievesthehigh-speedoperationsimilartoequivalentBipolarSchottkyTTLwhilemaintainingtheCMOSlowpowerdissipation. Features ■Highspeed:tPD=5.0ns(typ | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
QUAD2-INPUTANDGATE | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
Quad2-InputANDGate GeneralDescription TheVHCT08AisanadvancedhighspeedCMOS2InputANDGatefabricatedwithsilicongateCMOStechnology.Itachievesthehigh-speedoperationsimilartoequivalentBipolarSchottkyTTLwhilemaintainingtheCMOSlowpowerdissipation. Features ■Highspeed:tPD=5.0ns(typ | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
Quad2-InputANDGate GeneralDescription TheVHCT08AisanadvancedhighspeedCMOS2InputANDGatefabricatedwithsilicongateCMOStechnology.Itachievesthehigh-speedoperationsimilartoequivalentBipolarSchottkyTTLwhilemaintainingtheCMOSlowpowerdissipation. Features ■Highspeed:tPD=5.0ns(typ | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
Quad2-InputANDGate GeneralDescription TheVHCT08AisanadvancedhighspeedCMOS2InputANDGatefabricatedwithsilicongateCMOStechnology.Itachievesthehigh-speedoperationsimilartoequivalentBipolarSchottkyTTLwhilemaintainingtheCMOSlowpowerdissipation. Features ■Highspeed:tPD=5.0ns(typ | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
Quad2-InputANDGate GeneralDescription TheVHCT08AisanadvancedhighspeedCMOS2InputANDGatefabricatedwithsilicongateCMOStechnology.Itachievesthehigh-speedoperationsimilartoequivalentBipolarSchottkyTTLwhilemaintainingtheCMOSlowpowerdissipation. Features ■Highspeed:tPD=5.0ns(typ | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
Quad2-InputANDGate GeneralDescription TheVHCT08AisanadvancedhighspeedCMOS2InputANDGatefabricatedwithsilicongateCMOStechnology.Itachievesthehigh-speedoperationsimilartoequivalentBipolarSchottkyTTLwhilemaintainingtheCMOSlowpowerdissipation. Features ■Highspeed:tPD=5.0ns(typ | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
Quad2-InputANDGate | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI |
详细参数
- 型号:
74VHCT08ASJ_Q
- 功能描述:
逻辑门 Qd 2-Input AND Gate
- RoHS:
否
- 制造商:
Texas Instruments
- 产品:
OR
- 逻辑系列:
LVC
- 栅极数量:
2
- 线路数量(输入/输出):
2/1
- 高电平输出电流:
- 16 mA
- 低电平输出电流:
16 mA
- 传播延迟时间:
3.8 ns
- 电源电压-最大:
5.5 V
- 电源电压-最小:
1.65 V
- 最大工作温度:
+ 125 C
- 安装风格:
SMD/SMT
- 封装/箱体:
DCU-8
- 封装:
Reel
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
FSC |
2017+ |
SOP |
28659 |
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票 |
询价 | ||
FAIRCHILD |
2003 |
SOP |
255 |
询价 | |||
FAIRCHILD |
23+ |
SOP |
9526 |
询价 | |||
FSC |
2020+ |
SOP5.2 |
1084 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
FSC |
17+ |
SOP |
6200 |
100%原装正品现货 |
询价 | ||
FAIRCHILD |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
FAIRCHILD |
2004 |
SOP |
1795 |
原装现货海量库存欢迎咨询 |
询价 | ||
FSC/ON |
23+ |
原包装原封□□ |
82912 |
原装进口特价供应QQ1304306553更多详细咨询库存 |
询价 | ||
23+ |
N/A |
45990 |
正品授权货源可靠 |
询价 | |||
FAIRCHILD/仙童 |
23+ |
SOP |
90000 |
只做原厂渠道价格优势可提供技术支持 |
询价 |
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