74CB3Q3306ADCURG4.Z中文资料德州仪器数据手册PDF规格书

1FEATURES

• High-Bandwidth Data Path (up to 500 MHz(1))

• 5-V-Tolerant I/Os With Device Powered Up or

Powered Down

• Low and Flat ON-State Resistance (ron)

Characteristics Over Operating Range

(ron = 4 Ω Typ)

• Rail-to-Rail Switching on Data I/O Ports

– 0- to 5-V Switching With 3.3-V VCC

– 0- to 3.3-V Switching With 2.5-V VCC

• Bidirectional Data Flow With Near-Zero

Propagation Delay

• Low Input/Output Capacitance Minimizes

Loading and Signal Distortion

(Cio(OFF) = 3.5 pF Typ)

• Fast Switching Frequency (f OE = 20 MHz Max)

(1) For additional information regarding the performance

characteristics of the CB3Q family, refer to the TI application

report, CBT-C, CB3T, and CB3Q Signal-Switch Families,

literature number SCDA008.

• Data and Control Inputs Provide Undershoot

Clamp Diodes

• Low Power Consumption (ICC = 0.25 mA Typ)

• VCC Operating Range From 2.3 V to 3.6 V

• Data I/Os Support 0- to 5-V Signaling Levels

(0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, 5 V)

• Control Inputs Can Be Driven by TTL or

5-V/3.3-V CMOS Outputs

• Ioff Supports Partial-Power-Down Mode

Operation

• Latch-Up Performance Exceeds 100 mA

Per JESD 78, Class II

• ESD Performance Tested Per JESD 22

– 2000-V Human-Body Model

(A114-B, Class II)

– 1000-V Charged-Device Model (C101)

• Supports Both Digital and Analog

Applications: USB Interface, Differential Signal

Interface, Bus Isolation, Low-Distortion Signal

Gating