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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
71V65703S85BG	文件：311.56 Kbytes Page：27 Pages	256Kx36,512Kx183.3VSynchronousZBT™SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
71V65703S85BGG	文件：311.56 Kbytes Page：27 Pages	256Kx36,512Kx183.3VSynchronousZBT™SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
71V65703S85BGGI	文件：311.56 Kbytes Page：27 Pages	256Kx36,512Kx183.3VSynchronousZBT™SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
71V65703S85BGI	文件：311.56 Kbytes Page：27 Pages	256Kx36,512Kx183.3VSynchronousZBT™SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
71V65703S85BQ	文件：311.56 Kbytes Page：27 Pages	256Kx36,512Kx183.3VSynchronousZBT™SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
71V65703S85BQG	文件：311.56 Kbytes Page：27 Pages	256Kx36,512Kx183.3VSynchronousZBT™SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
71V65703S85BQGI	文件：311.56 Kbytes Page：27 Pages	256Kx36,512Kx183.3VSynchronousZBT™SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
71V65703S85BQI	文件：311.56 Kbytes Page：27 Pages	256Kx36,512Kx183.3VSynchronousZBT™SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
71V65703S85PFG	文件：311.56 Kbytes Page：27 Pages	256Kx36,512Kx183.3VSynchronousZBT™SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
71V65703S85PFGI	文件：311.56 Kbytes Page：27 Pages	256Kx36,512Kx183.3VSynchronousZBT™SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
IDT71V65703S85BG	文件：504.78 Kbytes Page：26 Pages	256Kx36,512Kx183.3VSynchronousZBTSRAMs	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT
IDT71V65703S85BGI	文件：504.78 Kbytes Page：26 Pages	256Kx36,512Kx183.3VSynchronousZBTSRAMs	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT
IDT71V65703S85BQ	文件：504.78 Kbytes Page：26 Pages	256Kx36,512Kx183.3VSynchronousZBTSRAMs	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT
IDT71V65703S85BQI	文件：504.78 Kbytes Page：26 Pages	256Kx36,512Kx183.3VSynchronousZBTSRAMs	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT
IDT71V65703S85PF	文件：504.78 Kbytes Page：26 Pages	256Kx36,512Kx183.3VSynchronousZBTSRAMs	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT
IDT71V65703S85PFI	文件：504.78 Kbytes Page：26 Pages	256Kx36,512Kx183.3VSynchronousZBTSRAMs	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市鹏顺微电子科技有限公司	71V65703S85PFI	Integrated Device Technology	2022+	原厂原包装	8600	全新原装支持表配单中国著名电子元器件独立分销	询价
深圳市特顺芯科技有限公司	71V65803S100BG	IDT	2007	BGA119	1477		询价
上海鑫科润电子科技有限公司	71V65803S100BG	IDT	2007	BGA119	1477	原装现货海量库存欢迎咨询	询价
深圳市斌腾达科技有限公司	71V65803S100BG	IDT, Integrated Device Technol	21+	64-LBGA	5280	进口原装!长期供应!绝对优势价格(诚信经营	询价
瀚佳科技(深圳)有限公司	71V65803S100BG	只做原装	21+	BGA119	36520	一级代理/放心采购	询价
深圳兆威电子有限公司	71V65803S100BG	IDT	23+	BGA119	90000	只做原厂渠道价格优势可提供技术支持	询价
深圳市艾宇欣科技有限公司	71V65803S100BG	IDT	1931+	N/A	1186	加我qq或微信，了解更多详细信息,体验一站式购物	询价
艾睿国际（香港）有限公司	71V65803S100BG	RENESAS(瑞萨)/IDT	2117+	PBGA-119(14x22)	315000	84个/托盘一级代理专营品牌!原装正品,优势现货,长	询价
深圳市科雨电子有限公司	71V65803S100BG	IDT	20+	BGA-119	84	就找我吧!--邀您体验愉快问购元件!	询价
深圳市博正芯科技有限公司	71V65803S100BG	IDT, Integrated Device Technol	21+	NA	11200	正品专卖,进口原装深圳现货	询价

更多71V65703S85PFI供应商更新时间2024-5-1 15:00:00

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