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71T75902	文件：298.28 Kbytes Page：24 Pages	1M x 18 2.5V Synchronous ZBT™ SRAM 2.5V I/O, Burst Counter Flow-Through Outputs Features ◆1Mx18memoryconfiguration ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(READ/WRITE)	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
71T75902S75BG	文件：298.28 Kbytes Page：24 Pages	1M x 18 2.5V Synchronous ZBT™ SRAM 2.5V I/O, Burst Counter Flow-Through Outputs Features ◆1Mx18memoryconfiguration ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(READ/WRITE)	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
71T75902S75BG8	文件：298.28 Kbytes Page：24 Pages	1M x 18 2.5V Synchronous ZBT™ SRAM 2.5V I/O, Burst Counter Flow-Through Outputs Features ◆1Mx18memoryconfiguration ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(READ/WRITE)	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
71T75902S75BGG	文件：298.28 Kbytes Page：24 Pages	1M x 18 2.5V Synchronous ZBT™ SRAM 2.5V I/O, Burst Counter Flow-Through Outputs Features ◆1Mx18memoryconfiguration ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(READ/WRITE)	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
71T75902S75BGG8	文件：298.28 Kbytes Page：24 Pages	1M x 18 2.5V Synchronous ZBT™ SRAM 2.5V I/O, Burst Counter Flow-Through Outputs Features ◆1Mx18memoryconfiguration ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(READ/WRITE)	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
71T75902S75PFG	文件：298.28 Kbytes Page：24 Pages	1M x 18 2.5V Synchronous ZBT™ SRAM 2.5V I/O, Burst Counter Flow-Through Outputs Features ◆1Mx18memoryconfiguration ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(READ/WRITE)	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
71T75902S75PFG8	文件：298.28 Kbytes Page：24 Pages	1M x 18 2.5V Synchronous ZBT™ SRAM 2.5V I/O, Burst Counter Flow-Through Outputs Features ◆1Mx18memoryconfiguration ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(READ/WRITE)	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
71T75902S75PFGI	文件：298.28 Kbytes Page：24 Pages	1M x 18 2.5V Synchronous ZBT™ SRAM 2.5V I/O, Burst Counter Flow-Through Outputs Features ◆1Mx18memoryconfiguration ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(READ/WRITE)	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
71T75902S75PFGI8	文件：298.28 Kbytes Page：24 Pages	1M x 18 2.5V Synchronous ZBT™ SRAM 2.5V I/O, Burst Counter Flow-Through Outputs Features ◆1Mx18memoryconfiguration ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(READ/WRITE)	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
71T75902S85BG	文件：298.28 Kbytes Page：24 Pages	1M x 18 2.5V Synchronous ZBT™ SRAM 2.5V I/O, Burst Counter Flow-Through Outputs Features ◆1Mx18memoryconfiguration ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(READ/WRITE)	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
71T75902S85BG8	文件：298.28 Kbytes Page：24 Pages	1M x 18 2.5V Synchronous ZBT™ SRAM 2.5V I/O, Burst Counter Flow-Through Outputs Features ◆1Mx18memoryconfiguration ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(READ/WRITE)	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
71T75902S85BGG	文件：298.28 Kbytes Page：24 Pages	1M x 18 2.5V Synchronous ZBT™ SRAM 2.5V I/O, Burst Counter Flow-Through Outputs Features ◆1Mx18memoryconfiguration ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(READ/WRITE)	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
71T75902S85BGG8	文件：298.28 Kbytes Page：24 Pages	1M x 18 2.5V Synchronous ZBT™ SRAM 2.5V I/O, Burst Counter Flow-Through Outputs Features ◆1Mx18memoryconfiguration ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(READ/WRITE)	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
71T75902S75BG	文件：230.47 Kbytes Page：23 Pages	2.5V Synchronous ZBT SRAM 2.5V I/O, Burst Counter Flow-Through Outputs	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT
71T75902S75BG8	文件：230.47 Kbytes Page：23 Pages	2.5V Synchronous ZBT SRAM 2.5V I/O, Burst Counter Flow-Through Outputs	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT
71T75902S75BGG	文件：230.47 Kbytes Page：23 Pages	2.5V Synchronous ZBT SRAM 2.5V I/O, Burst Counter Flow-Through Outputs	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT
71T75902S75BGG8	文件：230.47 Kbytes Page：23 Pages	2.5V Synchronous ZBT SRAM 2.5V I/O, Burst Counter Flow-Through Outputs	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT
71T75902S75PFG	文件：230.47 Kbytes Page：23 Pages	2.5V Synchronous ZBT SRAM 2.5V I/O, Burst Counter Flow-Through Outputs	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT
71T75902S75PFG8	文件：230.47 Kbytes Page：23 Pages	2.5V Synchronous ZBT SRAM 2.5V I/O, Burst Counter Flow-Through Outputs	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT
71T75902S75PFGI	文件：230.47 Kbytes Page：23 Pages	2.5V Synchronous ZBT SRAM 2.5V I/O, Burst Counter Flow-Through Outputs	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT

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详细参数

型号：
71T75902
功能描述：
静态随机存取存储器
RoHS：
否
制造商：
Cypress Semiconductor
存储容量：
16 Mbit
组织：
1 M x 16
访问时间：
55 ns
电源电压-最大：
3.6 V
电源电压-最小：
2.2 V
最大工作电流：
22 uA
最大工作温度：
+ 85 C
最小工作温度：
- 40 C
安装风格：
SMD/SMT
封装/箱体：
TSOP-48
封装：
Tray

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市一线半导体有限公司	71T75902S75PF	IDT	0521+	QFP	100		询价
上海鑫科润电子科技有限公司	71T75902S75PF	IDT	0521+	QFP	92	原装现货海量库存欢迎咨询	询价
深圳市斌腾达科技有限公司	71T75902S85BGG	IDT, Integrated Device Technol	21+	119-BGA	5280	进口原装!长期供应!绝对优势价格(诚信经营	询价
瀚佳科技(深圳)有限公司	71T75902S85BGG	IDT, Integrated Device Technol	21+	119-PBGA(14x22)	56200	一级代理/放心采购	询价
深圳市芯祺盛科技有限公司	71T75902S85BG	RENESAS(瑞萨)/IDT	1921+	PBGA-119(14x22)	3575	向鸿仓库现货,优势绝对的原装!	询价
深圳市艾宇欣科技有限公司	71T75902S85BG	IDT	1931+	N/A	1186	加我qq或微信，了解更多详细信息,体验一站式购物	询价
艾睿国际（香港）有限公司	71T75902S75BG	RENESAS(瑞萨)/IDT	2117+	PBGA-119(14x22)	315000	84个/托盘一级代理专营品牌!原装正品,优势现货,长	询价
深圳市科雨电子有限公司	71T75902S85BGG	IDT	20+	BGA-119	84	就找我吧!--邀您体验愉快问购元件!	询价
深圳市博正芯科技有限公司	71T75902S85BGG	IDT, Integrated Device Technol	21+	NA	11200	正品专卖,进口原装深圳现货	询价
深圳市冠亿通科技有限公司	71T75902S85BG	IDT,	21+		25000	原厂原包深圳现货主打品牌假一赔百可开票!	询价

更多71T75902供应商更新时间2024-6-11 16:30:00

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