首页 >7164L25DGI>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
7164L25DGI | CMOS Static RAM 64K | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | |
CMOS Static RAM 64K | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
CMOSStaticRAM64K(8Kx8-Bit) Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
CMOSStaticRAM64K(8Kx8-Bit) Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
CMOSStaticRAM64K | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
CMOSStaticRAM64K | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
CMOSStaticRAM64K(8Kx8-Bit) Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
CMOSStaticRAM64K(8Kx8-Bit) Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
CMOSStaticRAM64K | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
CMOSSTATICRAM64K(8Kx8-BIT) Description TheIDT7164isa65,536bithigh-speedstaticRAMorganizedas8Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology. Addressaccesstimesasfastas15nsareavailableandthecircuitoffersareducedpowerstandbymode.WhenCS1goesHIGHorCS | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
CMOSSTATICRAM64K(8Kx8-BIT) Description TheIDT7164isa65,536bithigh-speedstaticRAMorganizedas8Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology. Addressaccesstimesasfastas15nsareavailableandthecircuitoffersareducedpowerstandbymode.WhenCS1goesHIGHorCS | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
CMOSSTATICRAM64K(8Kx8-BIT) Description TheIDT7164isa65,536bithigh-speedstaticRAMorganizedas8Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology. Addressaccesstimesasfastas15nsareavailableandthecircuitoffersareducedpowerstandbymode.WhenCS1goesHIGHorCS | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
CMOSSTATICRAM64K(8Kx8-BIT) Description TheIDT7164isa65,536bithigh-speedstaticRAMorganizedas8Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology. Addressaccesstimesasfastas15nsareavailableandthecircuitoffersareducedpowerstandbymode.WhenCS1goesHIGHorCS | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
CMOSSTATICRAM64K(8Kx8-BIT) Description TheIDT7164isa65,536bithigh-speedstaticRAMorganizedas8Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology. Addressaccesstimesasfastas15nsareavailableandthecircuitoffersareducedpowerstandbymode.WhenCS1goesHIGHorCS | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
CMOSSTATICRAM64K(8Kx8-BIT) Description TheIDT7164isa65,536bithigh-speedstaticRAMorganizedas8Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology. Addressaccesstimesasfastas15nsareavailableandthecircuitoffersareducedpowerstandbymode.WhenCS1goesHIGHorCS | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
CMOSSTATICRAM64K(8Kx8-BIT) Description TheIDT7164isa65,536bithigh-speedstaticRAMorganizedas8Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology. Addressaccesstimesasfastas15nsareavailableandthecircuitoffersareducedpowerstandbymode.WhenCS1goesHIGHorCS | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
CMOSSTATICRAM64K(8Kx8-BIT) Description TheIDT7164isa65,536bithigh-speedstaticRAMorganizedas8Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology. Addressaccesstimesasfastas15nsareavailableandthecircuitoffersareducedpowerstandbymode.WhenCS1goesHIGHorCS | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
CMOSSTATICRAM64K(8Kx8-BIT) Description TheIDT7164isa65,536bithigh-speedstaticRAMorganizedas8Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology. Addressaccesstimesasfastas15nsareavailableandthecircuitoffersareducedpowerstandbymode.WhenCS1goesHIGHorCS | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
CMOSSTATICRAM64K(8Kx8-BIT) Description TheIDT7164isa65,536bithigh-speedstaticRAMorganizedas8Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology. Addressaccesstimesasfastas15nsareavailableandthecircuitoffersareducedpowerstandbymode.WhenCS1goesHIGHorCS | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IDT |
1994 |
DIP-28 |
295 |
询价 | |||
IDT |
23+ |
DIP-28 |
9526 |
询价 | |||
IDT |
23+ |
DIP-28 |
4500 |
全新原装、诚信经营、公司现货销售 |
询价 | ||
IDT |
3 |
公司优势库存 热卖中!! |
询价 | ||||
IDT |
20+ |
DIP-28 |
169 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
IDT, |
21+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
询价 | |||
RENESAS(瑞萨电子) |
22+ |
NA |
500000 |
万三科技,秉承原装,购芯无忧 |
询价 | ||
IDT, Integrated Device Technol |
21+ |
28-SOJ |
56200 |
一级代理/放心采购 |
询价 | ||
IDT |
1931+ |
N/A |
1186 |
加我qq或微信，了解更多详细信息,体验一站式购物 |
询价 | ||
RENESAS(瑞萨)/IDT |
2117+ |
SOJ-28 |
315000 |
27个/管一级代理专营品牌!原装正品,优势现货,长期 |
询价 |
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