WIRE WOUND SMD INDUCTOR

●FEATURE 1. Low core loss for high frequency power application 2. Large terminal surface ●APPLICATION 1. Portable communication equipment, notebook computer

文件：718.61 Kbytes 页数：4 Pages

AITSEMI

创瑞科技

丝印：6R0；SMD POWER INDUCTOR-RoHS

文件：175.55 Kbytes 页数：3 Pages

FENGJUI

峰瑞科技

丝印：6R0；SMD POWER INDUCTOR-RoHS

文件：210.8 Kbytes 页数：3 Pages

FENGJUI

峰瑞科技

丝印：6R0；SMD POWER INDUCTOR-RoHS

文件：149.95 Kbytes 页数：3 Pages

FENGJUI

峰瑞科技

CoolMOS Power Transistor

Features • Worldwide best R ds,on in TO247 • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant CoolMOS CP is specially designed for: • Hard switching SMPS topologies

文件：355 Kbytes 页数：10 Pages

Infineon

英飞凌

High peak current capability

Features • Worldwide best R ds,on in TO220 • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant

文件：551.62 Kbytes 页数：10 Pages

Infineon

英飞凌

600V CoolMOS??P6 Power Transistor

Description CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS™P6seriescombinesthe experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. Theoffereddevicesprovideallbenefitsofafastsw

文件：2.27598 Mbytes 页数：18 Pages

Infineon

英飞凌

600V CoolMOS™ P6 Power Transistor

文件：1.93867 Mbytes 页数：15 Pages

Infineon

英飞凌

CoolMOS Power Transistor

文件：584.61 Kbytes 页数：11 Pages

Infineon

英飞凌

SCHOTTKY RECTIERS SILICON RECTIFIER DIODES

文件：48.9 Kbytes 页数：1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商