首页 >60N60>规格书列表

零件编号下载&订购功能描述制造商&上传企业LOGO

60N60

HiPerFASTTM IGBTs with Diode

HiPerFAST™IGBTswithDiode C2-ClassHighSpeedIGBTs Features •InternationalStandardPackageminiBLOC •AluminiumNitrideIsolation-HighPowerDissipation •Anti-ParallelUltraFastDiode •IsolationVoltage3000V~ •LowVCE(sat)forMinimumOn-StateConductionLosses •MOSGateTurn

IXYS

IXYS Integrated Circuits Division

IXYS

60N60

Ultra-Low VCE(sat) IGBT

Features ●InternationalstandardpackageSOT-227B ●Aluminiumnitrideisolation -highpowerdissipation ●Isolationvoltage3000V~ ●Veryhighcurrent,fastswitchingIGBT ●LowVCE(sat)forminimumon-stateconductionlosses ●MOSGateturn-ondrivesimplicity ●Lowcollector-to-cas

IXYS

IXYS Integrated Circuits Division

IXYS

60N60

HiPerFASTTM IGBTs with Diode

HiPerFAST™IGBTswithDiode C2-ClassHighSpeedIGBTs Features •InternationalStandardPackageminiBLOC •AluminiumNitrideIsolation-HighPowerDissipation •Anti-ParallelUltraFastDiode •IsolationVoltage3000V~ •LowVCE(sat)forMinimumOn-StateConductionLosses •MOSGateTurn

IXYS

IXYS Integrated Circuits Division

IXYS

60N60FD1

60A, 600V FIELD STOP IGBT

DESCRIPTION SGT60N60FD1PN/P7/PS/PTadoptsFieldStopIGBTtechnology,offer theoptimumperformanceforinductionHeating,UPS,SMPSandPFC application. FEATURES 60A,600V,VCE(sat)(typ.)=2.2V@IC=60A Lowconductionloss Fastswitching Highinputimpedance

SILANSilan

士兰

SILAN

60N60SFD

600 V, 60 A Field Stop IGBT

Features •HighCurrentCapability •LowSaturationVoltage:VCE(sat)=2.3V@IC=60A •HighInputImpedance •FastSwitching •RoHSCompliant GeneralDescription UsingnovelfieldstopIGBTtechnology,Fairchild’sfieldstop IGBTsoffertheoptimumperformanceforsolarinverter,UP

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

60N60B2

B2-Class High Speed IGBTs (Electrically Isolated Back Surface)

IXYS

IXYS Integrated Circuits Division

IXYS

60N60B2D1

B2-Class High Speed IGBTs (Electrically Isolated Back Surface)

IXYS

IXYS Integrated Circuits Division

IXYS

APT60N60BCS

SuperJunctionMOSFET

ADPOW

Advanced Power Technology

ADPOW

APT60N60BCS

SuperJunctionMOSFET

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi

APT60N60BCS

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

APT60N60BCSG

SuperJunctionMOSFET

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi

APT60N60BCSG

SuperJunctionMOSFET

ADPOW

Advanced Power Technology

ADPOW

APT60N60SCS

SuperJunctionMOSFET

ADPOW

Advanced Power Technology

ADPOW

APT60N60SCS

SuperJunctionMOSFET

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi

APT60N60SCSG

SuperJunctionMOSFET

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi

APT60N60SCSG

SuperJunctionMOSFET

ADPOW

Advanced Power Technology

ADPOW

DAM60N60F

N-ChannelEnhancementModeMOSFET

DACO

DACO

DACO

FGA60N60UFD

600V,60AFieldStopIGBT

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

FGA60N60UFDTU

600V,60AFieldStopIGBT

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

FGH60N60

IGBT-FieldStop600V,60A

Description UsingnovelfieldstopIGBTtechnology,ONSemiconductor’snew seriesoffieldstop2ndgenerationIGBTsoffertheoptimum performanceforsolarinverter,UPS,welder,telecom,ESSandPFC applicationswherelowconductionandswitchinglossesareessential. Features •Maximum

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

详细参数

  • 型号:

    60N60

  • 制造商:

    IXYS

  • 制造商全称:

    IXYS Corporation

  • 功能描述:

    B2-Class High Speed IGBTs(Electrically Isolated Back Surface)

供应商型号品牌批号封装库存备注价格
NIEC英达
22+
模块
3500
原装现货,可开13%税票
询价
ST(意法)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
询价
Freescale(飞思卡尔)
2022+
60000
原厂原装,假一罚十
询价
ST
2022+
TO-3P
7300
原装现货
询价
ST(意法)
22+
BGA-100
6800
询价
ST(意法)
23+
NA/
8735
原厂直销,现货供应,账期支持!
询价
TRINNO
19+
247
100000
原装正品
询价
FAIRCHILD/仙童
2021+
TO-3P
5000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
询价
SL
22+
TO-3P
18000
只做全新原装,支持BOM配单,假一罚十
询价
SILAN/士兰微
22+
TO-3PN;TO-247-3L
150000
挂的就有,常备现货
询价
更多60N60供应商 更新时间2024-4-25 16:02:00