首页 >60N20>规格书列表

型号下载 订购功能描述制造商 上传企业LOGO

60N20

HiPerFET Power MOSFETs

HiPerFET Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt Features • International standard packages • Low RDS (on) • Rated for unclamped Inductive load switching (UIS) • Molding epoxies meet UL 94 V-0 flammability classification Advantages • Easy to mount • Space sav

文件:94.02 Kbytes 页数:2 Pages

IXYS

艾赛斯

60N20CB

Mosfet

PINGWEI

平伟

PINGWEI

IXFC60N20

HiPerFET MOSFET ISOPLUS220TM

HiPerFET™ MOSFET ISOPLUS220™ Electrically Isolated Back Surface N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family Features • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation • Low drain to t

文件:77.12 Kbytes 页数:2 Pages

IXYS

艾赛斯

IXFH60N20F

HiPerRFTM Power MOSFETs

HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr Features • RF capable MOSFETs • Double metal process for low gate resistance • Unclamped Inductive Switching (UIS) rated • Low package inductance -

文件:104.28 Kbytes 页数:2 Pages

IXYS

艾赛斯

IXFT60N20F

HiPerRF Power MOSFET F-Class: MegaHertz Switching

文件:103.11 Kbytes 页数:2 Pages

IXYS

艾赛斯

技术参数

  • ESD DIODES:

    N

  • VDS(V):

    200

  • VGS(MAX):

    4

  • IDS@Ta=25℃:

    1

  • PD@Ta=25℃:

    147

  • RDS(ON)(MAX)@VGS 10V:

    0.046

  • RDS(ON)(MAX)@VGS 4.5V:

    0

  • QG(TYP)@VGS 4.5V:

    0

  • QG(TYP)@VGS10V:

    56.9

  • Package:

    TO-263

供应商型号品牌批号封装库存备注价格
HITACHI/日立
23+
60N321
45000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
询价
TOSHIBA
26+
TO-3P
9526
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
询价
ST/意法
23+
TO-251
50000
全新原装正品现货,支持订货
询价
S
SOT-252
22+
6000
十年配单,只做原装
询价
ST
1030+
TO-251
1280
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
ST
23+
TO-251
16900
正规渠道,只有原装!
询价
S
22+
SOT-252
25000
只做原装进口现货,专注配单
询价
ST/意法
24+
TO252
8540
只做原装正品现货或订货假一赔十!
询价
ST
25+
TO-251
20000
原装,请咨询
询价
ST
26+
TO-251
60000
只有原装 可配单
询价
更多60N20供应商 更新时间2026-10-26 17:36:00