首页 >5540WBLK>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=15.5A@TC=25℃ ·DrainSourceVoltage :VDSS=550V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=18A@TC=25℃ ·DrainSourceVoltage :VDSS=550V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=18A@TC=25℃ ·DrainSourceVoltage :VDSS=550V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=16.5A@TC=25℃ ·DrainSourceVoltage :VDSS=550V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
BandpassFilter | MINI Mini-Circuits | MINI | ||
BandpassFilter | MINI Mini-Circuits | MINI | ||
Teck90600V,12GC#1214StrBC,XLPEInsM4,PVCJkt,AIAArmor,BlkPVCJkt,CSAHLSUNRES-40C ProductDescription Teck90600V,12+GConductor12+14AWG(7x20H)BareCopper,XLPEInsulationM4ColorCode,PVCInnerJacket,AluminumInterlockArmor,BlackPVC OuterJacket,CSAHLSUNRES-40C | BELDENBelden Inc. 百通电缆设计科技有限公司 | BELDEN | ||
ZENERDIODECHIPS •1N5518BTHRU1N5546BAVAILABLEINJANHCANDJANKCPERMIL-PRF-19500/437 •ZENERDIODECHIPS •ALLJUNCTIONSCOMPLETELYPROTECTEDWITHSILICONDIOXIDE •ELECTRICALLYEQUIVALENTTO1N5518BTHRU1N5546B •0.5WATTCAPABILITYWITHPROPERHEATSINKING •COMPATIBLEWITHALLWIREBONDING | CDI-DIODE Compensated Deuices Incorporated | CDI-DIODE | ||
0.5WZenerDiode Features SharpReverseCharacteristics LowReverseCurrentLevels HighReliabilityGoldBackMetal HighReliabilityTestedGrades. | SS Silicon Supplies | SS | ||
LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW •1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi |
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