丝印：50N10AL；Package：TO-252AA；100V N-Channel Enhancement Mode MOSFET

Features  RDS(ON) , VGS@10V, ID@20A

文件：416.37 Kbytes 页数：7 Pages

PANJIT

強茂

N-CHANNEL MOSFET in a TO-220 Plastic Package

文件：866.59 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 100V, 50A, RDS(ON) = 30mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TO-220 & TO-263 package. ■ Lead free product is acquired.

文件：430.82 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 50A, RDS(ON) = 30mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead free product is acquired.

文件：642.37 Kbytes 页数：4 Pages

CET-MOS

华瑞