4 MEG x 16 EDO DRAM

[MEMPHIS] GENERAL DESCRIPTION The 4 Meg x 16 DRAM is a high-speed CMOS, dynamic random-access memory device containing 67,108,864 bits and designed to operate from 3V to 3.6V. The device is functionally organized as 4,194,304 locations containing 16 bits each. The 4,194,304 memory locations are

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4 MEG x 16 EDO DRAM

[MEMPHIS] GENERAL DESCRIPTION The 4 Meg x 16 DRAM is a high-speed CMOS, dynamic random-access memory device containing 67,108,864 bits and designed to operate from 3V to 3.6V. The device is functionally organized as 4,194,304 locations containing 16 bits each. The 4,194,304 memory locations are

文件：598.34 Kbytes 页数：9 Pages

ETCList of Unclassifed Manufacturers

未分类制造商